公开(公告)号：EP1840980A1

公开(公告)日：2007-10-03

申请号：EP06425225.7

申请日：2006-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Crocifisso, Marco Antonio ,  Coffa, Salvatore

IPC: H01L35/32 ,  H01L23/38 ,  C12M1/38

CPC classification number: H01L35/32

Abstract: Structure (10) integrated on a semiconductor substrate (11) comprising at least one elementary Peltier cell which comprises:
a conductive region (15) formed in the semiconductor substrate (11) being less resistive with respect to the semiconductor substrate (11),
a first semiconductive region (19) projecting from the semiconductor substrate (11) in electric contact with the conductive region (15),
a second semiconductive region (23) projecting from the semiconductor substrate (11) in electric contact with the conductive region (15) and spaced from the first semiconductive region (19), the first semiconductive region (19) and the second semiconductive region (23) having different type of conductivity.

Abstract translation: 结构（10）集成在包括至少一个基本珀尔帖电池，它包括一个半导体衬底（11）：在所述半导体基板形成的导电区域（15）（11）是相对于所述半导体基片（11）的电阻更小，一 第一半导体区域（19）从与导电区域（15），第二半导电区域（23）电接触的半导体衬底（11）投影在与所述导电区域电接触的半导体衬底（11）投影（15） 并且从所述第一半导体区（19）间隔开，所述第一半导体区域（19）和具有不同的导电类型的第二半导体区（23）。