MICROMECHANICAL DEVICE WITH ELASTIC ASSEMBLY HAVING VARIABLE ELASTIC CONSTANT

    公开(公告)号:EP3839520A1

    公开(公告)日:2021-06-23

    申请号:EP20212118.2

    申请日:2020-12-07

    Abstract: A micromechanical device (50) comprising: a semiconductor body (51); a first mobile structure (53; 253); an elastic assembly (57, 59; 259), coupled to the first mobile structure and to the semiconductor body (51) and adapted to undergo deformation in a direction (X) ; and at least one abutment element (66b; 66a). The elastic assembly (57, 59; 259) is configured to enable an oscillation of the first mobile structure (53; 253) as a function of a force applied thereto. The first mobile structure (53; 253), the abutment element (66b; 66a) and the elastic assembly (57, 59; 259) are arranged with respect to one another in such a way that: when said force is lower than a force threshold, the elastic assembly (57, 59; 259) operates with a first elastic constant (K 1 ; K 4 ); and when said force is greater than the threshold force, then the first mobile structure is in contact with the abutment element, and a deformation of the elastic assembly is generated, which operates with a second elastic constant (K 1 + K 2 ; K 5 ) different from the first elastic constant.
    Main figure: Figure 2

    MICROELECTROMECHANICAL SENSOR DEVICE WITH ACTIVE OFFSET COMPENSATION

    公开(公告)号:EP4321876A1

    公开(公告)日:2024-02-14

    申请号:EP23185740.0

    申请日:2023-07-17

    Abstract: A microelectromechanical sensor device having a sensing structure (1) with: a substrate (2); an inertial mass (3), suspended above the substrate (2) and elastically coupled to a rotor anchoring structure (6) by elastic coupling elements (8), to perform at least one inertial movement due to a quantity to be sensed; first sensing electrodes (9), integrally coupled to the inertial mass (3) to be movable due to the inertial movement; and second sensing electrodes (12), fixed with respect to the quantity to be sensed, facing and capacitively coupled to the first sensing electrodes (9) to form sensing capacitances having a value that is indicative of the quantity to be sensed. The second sensing electrodes (12) are arranged in a suspended manner above the substrate (2) and a compensation structure (20) is configured to move the second sensing electrodes (12) with respect to the first sensing electrodes (9) and vary a facing distance thereof, in the absence of the quantity to be sensed, in order to compensate for a native offset of the sensing structure (1).

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