公开(公告)号：EP4113598A3

公开(公告)日：2023-05-24

申请号：EP22181496.5

申请日：2022-06-28

Applicant: STMicroelectronics S.r.l.

Inventor： DORIA, Daria

IPC: H01L23/485 ,  H01L23/00 ,  H01L23/31 ,  H01L21/60

Abstract: An integrated electronic device including: a main body (2) delimited by a front surface (S top ); a top conductive region (10) extending within the main body (2), starting from the front surface (S top ); a first dielectric region (14) extending on the front surface (S top ); and a barrier structure (35), arranged on the first dielectric region (14). A first aperture (50) extends through the barrier structure (35) and the first dielectric region (14); the first aperture (50) is delimited at bottom by the top conductive region (10). The integrated electronic device (31) further includes a contact structure (22) including at least a first conductive region (24) extending within the first aperture (50), in direct contact with the top conductive region (10) and the barrier structure (35).

公开(公告)号：EP4113598A2

公开(公告)日：2023-01-04

申请号：EP22181496.5

申请日：2022-06-28

Applicant: STMicroelectronics S.r.l.

Inventor： DORIA, Daria

IPC: H01L23/485 ,  H01L23/00 ,  H01L23/31 ,  H01L21/60

Abstract: An integrated electronic device including: a main body (2) delimited by a front surface (S top ); a top conductive region (10) extending within the main body (2), starting from the front surface (S top ); a first dielectric region (14) extending on the front surface (S top ); and a barrier structure (35), arranged on the first dielectric region (14). A first aperture (50) extends through the barrier structure (35) and the first dielectric region (14); the first aperture (50) is delimited at bottom by the top conductive region (10). The integrated electronic device (31) further includes a contact structure (22) including at least a first conductive region (24) extending within the first aperture (50), in direct contact with the top conductive region (10) and the barrier structure (35).

公开(公告)号：EP4131364A3

公开(公告)日：2023-06-14

申请号：EP22188099.0

申请日：2022-08-01

Applicant: STMicroelectronics S.r.l.

Inventor： MARIANI, Simone Dario ,  PIZZI, Elisabetta ,  DORIA, Daria

IPC: H01L23/31 ,  H01L21/60 ,  H01L23/522

Abstract: A back end of line (BEOL) structure for an integrated circuit chip (10) includes a last metal structure (20, 32) providing a bonding pad (20). A passivation structure (28o)ver the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer (42) extends over the passivation structure and is placed in contact with the upper surface of the bonding pad (32, 20). An insulator material layer (50) covers the conformal nitride layer (42) and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.

公开(公告)号：EP4131364A2

公开(公告)日：2023-02-08

申请号：EP22188099.0

申请日：2022-08-01

Applicant: STMicroelectronics S.r.l.

Inventor： MARIANI, Simone Dario ,  PIZZI, Elisabetta ,  DORIA, Daria

IPC: H01L23/31 ,  H01L21/60 ,  H01L23/522

Abstract: A back end of line (BEOL) structure for an integrated circuit chip (10) includes a last metal structure (20, 32) providing a bonding pad (20). A passivation structure (28o)ver the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer (42) extends over the passivation structure and is placed in contact with the upper surface of the bonding pad (32, 20). An insulator material layer (50) covers the conformal nitride layer (42) and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.