公开(公告)号：EP4304053A1

公开(公告)日：2024-01-10

申请号：EP23175892.1

申请日：2023-05-29

Applicant: STMicroelectronics S.r.l.

Inventor： SEGHIZZI, Luca ,  VERCESI, Federico ,  LONGONI, Gianluca

IPC: H02K1/14 ,  H02K3/26 ,  H02K99/00 ,  H01F41/04 ,  H02K15/02

Abstract: A stator (1) for an electric actuator or motor, comprising: a solid body (20; 35); a ferromagnetic core region (8) between the layers of semiconductor material (24, 38), electrically insulated from said layers of semiconductor material (24, 38); a plurality of conductive through vias (14) through the solid body (20; 35); a first plurality of conductive strips (10), which extend parallel to one another above the core (8); and a second plurality of conductive strips (10), which extend parallel to one another above the core and opposite to the first plurality of conductive strips; wherein the first plurality of conductive strips (10), the plurality of conductive through vias (14), and the second plurality of conductive strips (10) form a winding or coil of the stator (1).

公开(公告)号：EP4155255A1

公开(公告)日：2023-03-29

申请号：EP22195564.4

申请日：2022-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： LONGONI, Gianluca ,  SEGHIZZI, Luca ,  NOMELLINI, Andrea

IPC: B81C1/00

Abstract: A process for manufacturing a MEMS device (101) including: forming a first sacrificial dielectric region (15) on a semiconductor wafer (4,6,10,12,14); forming a structural layer (25) of semiconductor material on the first sacrificial dielectric region (15); forming a plurality of first openings (35) through the structural layer (25), which laterally delimit at least one functional element (44, 46, 48) and give out onto the first sacrificial dielectric region (15); forming a second sacrificial dielectric region (57) on the structural layer (25) so as to close the first openings (35); forming a ceiling layer (75) of semiconductor material on the second sacrificial dielectric region (57); forming a plurality of second openings (77) through the ceiling layer (75); forming on the ceiling layer (77) a permeable layer (80) of polysilicon, which closes the second openings (77); selectively removing the first and the second sacrificial dielectric regions (15, 57) causing a gas to flow through the permeable layer (80) so as to release the functional element (44, 46, 48); and then forming on the permeable layer (80) a sealing layer (75) of semiconductor material.