Abstract:
The integrated power device (100) comprises a power transistor (2) made up of a first diode (25) and a second diode (26) which are connected together in series between a collector region (6) and emitter-contact region (14) of the power transistor (2) and define a common intermediate node (24). The power device (100) also comprises a control circuit (3) including a high-voltage region (30) bonded on the emitter-contact region (14) by means of an adhesive layer (108), and biasing means (109, 110, 111) connected between the common intermediate node (24) and the high-voltage region (30). The biasing means (109, 110, 111) comprise a contact pad (109) electrically connected to the common intermediate node (24), an electrical connection region (111) which is in electrical contact with the high-voltage region (30), and a wire (110) having a first end soldered on the contact pad (109) and a second end soldered on said electrical connection region (111).
Abstract:
A method for detecting variations of the torque of a DC motor particularly suited for detecting an accidentally block of the motor, comprises the operations of generating a first signal representing the current flowing in the motor, multiplying the first signal with a pre-established function producing a product signal, generating a comparison signal to correspond to the slope of the product signal and signaling a torque variation if the comparison signal surpasses a certain threshold. The method is implemented by a control circuit for detecting a torque variation of an electric DC motor, comprising sensing means of the current flowing in the motor, generating a first signal, first circuit means for generating a product signal of the first signal by a pre-established function, second circuit means for generating a comparison signal to correspond to the slope of the product signal, a comparator of the comparison signal with a certain threshold, signaling a torque variation when the comparison signal surpasses the threshold.
Abstract:
A fast operating, electronic protection device (1) against overvoltages, intended for a power transistor (M1) having at least one control terminal (G) of the MOS type, is of the type which comprises a Zener diode (Z1) associated with the power transistor (M1) and integrated together therewith in a semiconductor substrate (9), and comprises a second transistor (M2) connected to the power transistor into a Darlington configuration and connected, in turn, to the Zener diode (Z1). The protection from overvoltages provided by the device (1) is very fast in operation, and can be implemented in integrated form at reduced cost and without introducing parasitic elements.