公开(公告)号：EP3840031A1

公开(公告)日：2021-06-23

申请号：EP20215160.1

申请日：2020-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： PALEARI, Andrea ,  MARIANI, Simone Dario ,  BALDI, Irene ,  BRAZZELLI, Daniela ,  MERLINI, Alessandra Piera

IPC: H01L21/74 ,  H01L23/535

Abstract: An integrated device (100;300) is proposed comprising a deep plug (115). The deep plug (115) comprises a deep trench (120) extending in a semiconductor body (105) from a shallow surface (155) of a shallow trench (150), and a trench contact (140) contacting a conductive filler (135) of the deep trench (120) through the shallow trench (150) at its shallow surface (155). A system (500) comprising at least one integrated device (100;300) as above is also proposed. Moreover, a corresponding process for manufacturing this integrated device (100;300) is proposed.