公开(公告)号：EP4206701A3

公开(公告)日：2023-11-22

申请号：EP22216330.5

申请日：2022-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： LETOR, Romeo ,  PUNTORIERI, Veronica

IPC: G01R31/26 ,  G01R31/27 ,  G01R31/52 ,  G11C27/02

Abstract: A system (200) to monitor a MOSFET (102), the system including a switching arrangement (202) configured to switchably isolate a gate terminal (102G) of the MOSFET (102) and a source terminal (102S) of the MOSFET (102) from a gate-control voltage source ((104) and a test circuit (204) configured to detect a change in a gate-to-source voltage of the MOSFET (102) over a test period, the test period occurring while the gate terminal (102G) and the source terminal (102S) are isolated.

公开(公告)号：EP4206701A2

公开(公告)日：2023-07-05

申请号：EP22216330.5

申请日：2022-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： LETOR, Romeo ,  PUNTORIERI, Veronica

IPC: G01R31/26 ,  G01R31/27 ,  G01R31/52

Abstract: A system (200) to monitor a MOSFET (102), the system including a switching arrangement (202) configured to switchably isolate a gate terminal (102G) of the MOSFET (102) and a source terminal (102S) of the MOSFET (102) from a gate-control voltage source ((104) and a test circuit (204) configured to detect a change in a gate-to-source voltage of the MOSFET (102) over a test period, the test period occurring while the gate terminal (102G) and the source terminal (102S) are isolated.