公开(公告)号：EP1764597A1

公开(公告)日：2007-03-21

申请号：EP05425648.2

申请日：2005-09-16

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Petroni, Simona ,  Pomarico, Angela ,  Baldo, Lorenzo

IPC: G01L9/00 ,  G01L11/04

CPC classification number: G01L9/0025

Abstract: Surface acoustic wave pressure sensor (1) comprising:
- a substrate (3) and at least one flexible membrane (5), suspended over a cavity (4) defined in the thickness of the substrate, the membrane (5) being elastically deformable by a pressure (P) applied by a fluid (5) and being defined between a first surface (5a) facing the cavity (4) and a second opposite surface (5b);
- a SAW device (6, 7 8) comprising a layer of piezoelectric material (6) arranged on said second surface (5b) of the membrane, the SAW device further comprising at least one SAW electro-acoustic transducer (7, 8) formed on one free surface of said piezoelectric layer (6).
The piezoelectric layer (6) is formed by deposition of piezoelectric material on the membrane (5) and the substrate (3) is integrated in a wafer of semiconductor material (2), the membrane being a layer of said wafer (2) suspended over said cavity (4).

Abstract translation: 表面声波压力传感器（1）包括： - 衬底（3）和至少一个柔性膜（5），其悬挂在限定在所述衬底的厚度上的空腔（4）上，所述膜（5）可通过 由流体（5）施加并且限定在面向空腔（4）的第一表面（5a）和第二相对表面（5b）之间的压力（P）; - SAW器件（6,78），其包括布置在所述膜的所述第二表面（5b）上的压电材料层（6），所述SAW器件还包括形成有至少一个SAW电声换能器（7,8） 在所述压电层（6）的一个自由表面上。 压电层（6）通过在膜（5）上沉积压电材料而形成，并且衬底（3）集成在半导体材料（2）的晶片中，该膜是所述晶片（2）的一个层 所述腔（4）。