公开(公告)号：WO2007006502A1

公开(公告)日：2007-01-18

申请号：PCT/EP2006/006670

申请日：2006-07-07

Applicant: STMICROELECTRONICS S.R.L. ,  RONSISVALLE, Cesare ,  ENEA, Vincenzo

Inventor： RONSISVALLE, Cesare ,  ENEA, Vincenzo

IPC: H01L29/78 ,  H01L27/07

CPC classification number: H01L29/7803 ,  H01L27/0259 ,  H01L27/0716 ,  H01L29/7302 ,  H01L29/739 ,  H01L29/7808 ,  H01L29/866

Abstract: A power actuator (20) of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor (2) and a low voltage DMOS transistor (3) connected in cascode configuration between a collector terminal (C) of the bipolar transistor (2) and a source terminal (S) of the DMOS transistor (3) and having respective control terminals (B, G). Advantageously according to the invention, the power actuator (20) further comprises at least a Zener diode (21), inserted between the source terminal (S) of the DMOS transistor (3) and the control terminal (B) of the bipolar transistor (2).

Abstract translation: 描述了发射器切换型的电源致动器（20），功率致动器包括至少一个高压双极晶体管（2）和低电压DMOS晶体管（3），其以共源共栅结构连接在集电极端子（C）之间 双极晶体管（2）和DMOS晶体管（3）的源极端子（S）并具有各自的控制端子（B，G）。 有利地，根据本发明，功率致动器（20）还包括至少一个齐纳二极管（21），其插入在DMOS晶体管（3）的源极端（S）和双极晶体管的控制端（B）之间 2）。

公开(公告)号：WO2004102671A1

公开(公告)日：2004-11-25

申请号：PCT/IT2003/000298

申请日：2003-05-19

Applicant: STMICROELECTRONICS S.R.L. ,  RONSISVALLE, Cesare

Inventor： RONSISVALLE, Cesare

IPC: H01L29/745

CPC classification number: H01L29/66378 ,  H01L29/7455

Abstract: A power device (1) formed by a thyristor (25) and by a MOSFET transistor (26), series-connected between a first and a second current-conduction terminal (A, S). the power device (1) moreover has a control terminal (G) connected to an insulated-gate electrode (20) of the MOSFET transistor (26) and receiving a control voltage for turning on/off the device, and a third current-conduction terminal (B) connected to the thyristor (25) for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reversebias safe-operating area (RBSOA).

Abstract translation: 由晶闸管（25）和串联连接在第一和第二导通端子（A，S）之间的MOSFET晶体管（26）形成的功率器件（1）。 功率器件（1）还具有连接到MOSFET晶体管（26）的绝缘栅电极（20）的控制端子（G），并接收用于接通/关断器件的控制电压和第三电流传导 端子（B）连接到晶闸管（25），用于在关断期间快速提取电荷。 因此，在关闭时，没有当前尾部，并且关闭非常快。 功率器件没有寄生元件，因此具有非常高的反向保护工作区（RBSOA）。

公开(公告)号：WO2007135694A1

公开(公告)日：2007-11-29

申请号：PCT/IT2006/000372

申请日：2006-05-18

Applicant: STMICROELECTRONICS S.R.L. ,  RONSISVALLE, Cesare ,  ENEA, Vincenzo

Inventor： RONSISVALLE, Cesare ,  ENEA, Vincenzo

IPC: H01L29/745 ,  H01L29/749 ,  H01L29/74

CPC classification number: H01L29/7395 ,  H01L29/742 ,  H01L29/7455

Abstract: Described herein is a power device (10) having a first current-conduction terminal (A) , a second current-conduction terminal (K) , a control terminal (G) receiving, in use, a control voltage (VGATE) of the power device (10), and a thyristor device (12) and a first insulated-gate switch device (14) connected in series between the first and the second conduction terminals; the first insulated-gate switch device (14) has a gate terminal connected to the control terminal (G), and the thyristor device (12) has a base terminal (16) . The power device (10) is further provided with: a second insulated-gate switch device (18), connected between the first current-conduction terminal (A) and the base terminal (16) of the thyristor device (12) , and having a respective gate terminal connected to the control terminal (G) ; and a Zener diode (19) , connected between the base terminal (16) of the thyristor device (12) and the second current-conduction terminal (K) so as to enable extraction of current from the base terminal (16) in a given operating condition.

Abstract translation: 这里描述的是具有第一通电端子（A），第二通电端子（K），控制端子（G）的功率器件（10），其在使用中接收功率的控制电压（VGATE） 装置（10）和串联连接在第一和第二导电端子之间的晶闸管装置（12）和第一绝缘栅极开关装置（14） 第一绝缘栅极开关装置（14）具有连接到控制端子（G）的栅极端子，并且晶闸管装置（12）具有基极端子（16）。 功率器件（10）还具有连接在晶闸管器件（12）的第一通电端子（A）和基极端子（16）之间的第二绝缘栅极开关器件（18），并具有 连接到所述控制端子（G）的相应的栅极端子; 和连接在晶闸管器件（12）的基极端子（16）和第二通电端子（K）之间的齐纳二极管（19），以便能够在给定的基极端子（16）中提取电流 操作条件。

公开(公告)号：WO2003073509A1

公开(公告)日：2003-09-04

申请号：PCT/IT2002/000123

申请日：2002-02-28

Applicant: STMICROELECTRONICS S.R.L. ,  RONSISVALLE, Cesare

Inventor： RONSISVALLE, Cesare

IPC: H01L27/07

CPC classification number: H01L27/0825 ,  H01L21/8222 ,  H01L27/0744

Abstract: The invention relates to an improved bipolar transistor structure (1) that may be integrated into a Darlington configuration, of the type having conventional base (B), collector (C) and emitter (E) terminals and comprising a resistance (R) between the collector (C) and the (B) and a thyristor device (3) SCR between the base (B) and the emitter (E). The resistance (R) is a high voltage resistance to keep normally ON the transistor structure while the thyristor is a turning off circuit that is enabled and driven on its gate terminal.

Abstract translation: 本发明涉及一种改进的双极晶体管结构（1），其可以集成到具有常规基极（B），集电极（C）和发射极（E）端子的类型的达林顿配置中，并且包括在 集电极（C）和（B）以及晶闸管器件（3）在基极（B）和发射极（E）之间的SCR。 电阻（R）是高电压电阻，以保持晶体管结构的正常导通，而晶闸管是在其栅极端子上使能和驱动的关断电路。

公开(公告)号：EP1479108A1

公开(公告)日：2004-11-24

申请号：EP02707105.9

申请日：2002-02-28

Applicant: STMicroelectronics S.r.l.

Inventor： RONSISVALLE, Cesare

IPC: H01L27/07

CPC classification number: H01L27/0825 ,  H01L21/8222 ,  H01L27/0744

Abstract: The invention relates to an improved bipolar transistor structure (1) that may be integrated into a Darlington configuration, of the type having conventional base (B), collector (C) and emitter (E) terminals and comprising a resistance (R) between the collector (C) and the (B) and a thyristor device (3) SCR between the base (B) and the emitter (E). The resistance (R) is a high voltage resistance to keep normally ON the transistor structure while the thyristor is a turning off circuit that is enabled and driven on its gate terminal.

公开(公告)号：EP1625624A1

公开(公告)日：2006-02-15

申请号：EP03727960.1

申请日：2003-05-19

Applicant: STMicroelectronics S.r.l.

Inventor： RONSISVALLE, Cesare

IPC: H01L29/745 ,  H01L21/332

CPC classification number: H01L29/66378 ,  H01L29/7455

Abstract: A power device (1) formed by a thyristor (25) and by a MOSFET transistor (26), series-connected between a first and a second current-conduction terminal (A, S). the power device (1) moreover has a control terminal (G) connected to an insulated-gate electrode (20) of the MOSFET transistor (26) and receiving a control voltage for turning on/off the device, and a third current-conduction terminal (B) connected to the thyristor (25) for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reversebias safe-operating area (RBSOA).