公开(公告)号：US20020117732A1

公开(公告)日：2002-08-29

申请号：US10038753

申请日：2002-01-04

Applicant: STMicroelectronics S.r.l.

Inventor： Romeo Letor ,  Antonino Torres ,  Leonardo Fragapane

IPC: H01L029/74 ,  H01L031/111 ,  H01L029/76 ,  H01L031/062

CPC classification number: H01L27/0248

Abstract: An integrated power device having a power transistor made up of a first diode and a second diode that are connected together in series between a collector region and emitter-contact region of the power transistor to define a common intermediate node, a control circuit including a high-voltage region bonded on the emitter-contact region (14) by means of an adhesive layer, and biasing circuit connected between the common intermediate node and the high-voltage region. The biasing circuit including a contact pad electrically connected to the common intermediate node, an electrical connection region that is in electrical contact with the high-voltage region (30), and a wire having a first end soldered on the contact pad and a second end soldered on said electrical connection region.

Abstract translation: 一种具有由第一二极管和第二二极管组成的功率晶体管的集成功率器件，其串联连接在功率晶体管的集电极区域和发射极 - 接触区域之间，以限定公共中间节点，控制电路包括高 - 电压区域，通过粘合剂层结合在发射极 - 接触区域（14）上，以及偏置电路，连接在公共中间节点和高压区域之间。 所述偏置电路包括电连接到所述公共中间节点的接触焊盘，与所述高压区域（30）电接触的电连接区域，以及具有焊接在所述接触焊盘上的第一端的导线，以及第二端 焊接在所述电连接区域上。