公开(公告)号：US20020144993A1

公开(公告)日：2002-10-10

申请号：US10062270

申请日：2002-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Sergio Tommaso Spampinato ,  Antonino Torres

IPC: H03B001/00 ,  H05B001/02

CPC classification number: G05F3/225 ,  F02D41/20 ,  H03K17/0826 ,  H03K2017/0806

Abstract: A thermal control circuit for an integrated power transistor includes a current generator controlled by a turn on signal, a sensing resistance in series with the power transistor, and a current limiter acting when the voltage drop on the sensing resistance overcomes a certain value. The circuit also includes a current amplifier coupled to the output node of the controlled current generator for outputting a drive current that is injected onto a control node of the power transistor. A soft thermal shut down circuit is provided having a conduction state which is enhanced as the temperature increases for reducing the drive current. The circuit controls the voltage on the power transistor in a more effective manner because the current amplifier has a variable gain controlled by the state of conduction of the soft thermal shut down circuit.

Abstract translation: 用于集成功率晶体管的热控制电路包括由导通信号控制的电流发生器，与功率晶体管串联的感测电阻，以及当感测电阻上的电压降克服一定值时起作用的限流器。 电路还包括耦合到受控电流发生器的输出节点的电流放大器，用于输出注入到功率晶体管的控制节点上的驱动电流。 提供了具有导通状态的软热关断电路，随着温度升高而增加导通状态以降低驱动电流。 该电路以更有效的方式控制功率晶体管上的电压，因为电流放大器具有由软热关断电路的导通状态控制的可变增益。

公开(公告)号：US20020109151A1

公开(公告)日：2002-08-15

申请号：US10032289

申请日：2001-12-21

Applicant: STMicroelectronics S.r.l.

Inventor： Sergio Tommaso Spampinato

IPC: H01L029/74

CPC classification number: H01L27/0761

Abstract: An integrated device in emitter-switching configuration is described. The device is integrated in a chip of semiconductor material of a first conductivity type which has a first surface and a second surface opposite to each other. The device comprises a first transistor having a base region, an emitter region and a collector region, a second transistor having a not drivable terminal for collecting charges which is connected with the emitter terminal of the first transistor, a quenching element of the first transistor which discharges current therefrom when the second transistor is turned off. The quenching element comprises at least one Zener diode made in polysilicon which is coupled with the base terminal of the first transistor and with the other not drivable terminal of the second transistor. The at least one polysilicon Zener diode is formed on the second surface of said chip and it comprises a polysilicon layer having at least one zone of the first conductivity type and at least one zone of a second conductivity type in order to form at least one P-N junction.

Abstract translation: 描述了发射器 - 开关配置中的集成器件。 该器件集成在第一导电类型的半导体材料芯片中，该半导体材料具有彼此相对的第一表面和第二表面。 该器件包括具有基极区域，发射极区域和集电极区域的第一晶体管，具有用于收集与第一晶体管的发射极端子连接的电荷的不可驱动端子的第二晶体管，第一晶体管的猝灭元件， 当第二晶体管截止时，从其中释放电流。 淬火元件包括至少一个由多晶硅制成的齐纳二极管，其与第一晶体管的基极端子和第二晶体管的另一个不可驱动的端子耦合。 所述至少一个多晶硅齐纳二极管形成在所述芯片的第二表面上，并且其包括具有至少一个第一导电类型区域和至少一个第二导电类型区域的多晶硅层，以形成至少一个PN 交界处