公开(公告)号：EP1635397A1

公开(公告)日：2006-03-15

申请号：EP04425681.6

申请日：2004-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： Patti, Davide Giuseppe ,  Settanni, Giuditta

IPC: H01L29/06 ,  H01L27/02

CPC classification number: H01L29/0615

Abstract: Instabilities and related drawbacks that arise when interruptions of a perimetral high voltage ring extension implanted regions (RHV) of a main junction (P_tub1, (P_tub2, ...) of an integrated device must be realized may be effectively prevented.
This important result is achieved by an extremely simple expedient: whenever an interruption (I) of the high voltage ring extension must be created, it is not realized straight across it along a common orthogonal direction to the perimetral implanted region, on the contrary, the narrow interruption is defined obliquely or slantingly across the width of the perimetral high voltage ring extension. In case of a straight interruption, the angle of slant (α) may be generally comprised between 30 and 60 degrees and more preferably is 45 degrees or close to it. Naturally, the narrow interruption is created by masking it from dopant implantation when realizing the perimetral high voltage ring extension region.

Abstract translation: 可以有效地防止在必须实现集成装置的主结（P_tub1，（P_tub2，...）的周边高压环延伸注入区域（RHV）的中断时产生的不稳定性和相关缺点，这一重要结果是 通过非常简单的方法实现：每当必须产生高压环延伸的中断（I）时，沿着与周边注入区域的共同的正交方向在其上没有实现直线，相反，窄间隔被定义 倾斜或倾斜地穿过周边高压环延伸部的宽度，在直线中断的情况下，倾斜角（±）通常可以在30度和60度之间，更优选地在45度或更接近， 当实现周边高压环延伸区域时，通过将其从掺杂剂注入掩蔽来产生窄中断。