公开(公告)号：US20230326975A1

公开(公告)日：2023-10-12

申请号：US18334275

申请日：2023-06-13

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA ,  Claudio CHIBBARO

IPC: H01L29/16 ,  H01L29/872 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/872 ,  H01L29/66143

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

公开(公告)号：US20220028979A1

公开(公告)日：2022-01-27

申请号：US17375426

申请日：2021-07-14

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA ,  Claudio CHIBBARO

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.