公开(公告)号：EP0740073B1

公开(公告)日：2004-08-18

申请号：EP95830168.1

申请日：1995-04-28

Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO ,  STMicroelectronics S.r.l.

Inventor： Palara, Sergio ,  Sueri, Stefano ,  Schiaccianoce, Salvatore

IPC: F02P17/12 ,  G01R29/027 ,  G01R31/38

CPC classification number: H01T13/60 ,  F02P17/12 ,  G01R29/0273

公开(公告)号：EP1727203A1

公开(公告)日：2006-11-29

申请号：EP05425365.3

申请日：2005-05-24

Applicant: STMicroelectronics S.r.l.

Inventor： Torres, Antonino ,  Sueri, Stefano ,  Patti, Davide

IPC: H01L27/02 ,  H03K17/0814 ,  F02P3/04

CPC classification number: F02P3/0435 ,  F02D2041/2058 ,  F02D2041/2075 ,  F02P3/02 ,  H03K17/08128

Abstract: A power IGBT device is described being monolithically integrated and comprising an input terminal (I10) suitable to receive an input voltage (Vin) and an output terminal (O10) suitable to supply a current (Iout) with limited and predetermined highest value. Such IGBT device comprising an IGBT power element (2) inserted between said output terminal (O10) and a supply reference (GND) and having a control terminal (15) connected to the input terminal (110) by means of a control circuit (12) comprising at least a transistor (18) inserted between the control terminal (15) and the supply reference (GND) and a resistive element (Rc) inserted between the input terminal (I10) and the control terminal (15).

Abstract translation: 电力IGBT器件被描述为单片集成的，并且包括适于接收输入电压（Vin）的输入端（I10）和适于提供具有有限和预定最高值的电流（Iout）的输出端（O10）。 这种IGBT器件包括插入在所述输出端子（O10）和电源基准（GND）之间并且具有通过控制电路（12）连接到输入端子（110）的控制端子（15）的IGBT功率元件（2） ）包括插入在控制端子（15）和供电基准（GND）之间的至少一个晶体管（18）和插入在输入端子（I10）和控制端子（15）之间的电阻元件（Rc）。