公开(公告)号：EP0926737B1

公开(公告)日：2005-10-19

申请号：EP98123137.6

申请日：1998-12-04

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics S.A.

Inventor： Pio, Federico ,  Sourgen, Laurent c/o STMicroelctronics S.A. ,  Zatelli, Nicola STMicroelectronics Srl ,  Lisart, Mathieu c/o STMicroelectronics S.A.

IPC: H01L23/58 ,  H01L23/556

CPC classification number: H01L27/115 ,  H01L27/02

公开(公告)号：EP0926737A3

公开(公告)日：1999-07-14

申请号：EP98123137.6

申请日：1998-12-04

Applicant: STMicroelectronics S.r.l.

Inventor： Pio, Federico ,  Sourgen, Laurent c/o STMicroelctronics S.A. ,  Zatelli, Nicola STMicroelectronics Srl ,  Lisart, Mathieu c/o STMicroelectronics S.A.

IPC: H01L23/58 ,  H01L23/556

CPC classification number: H01L27/115 ,  H01L27/02

Abstract: An EEPROM cell is described as having a screening metal structure formed of preference in the first metal layer and located in substantial overlaying relationship at the floating gate terminal. This defeats the possibility of anomalous readings being obtained by measuring the amount of charge on the floating gate terminal. An additional screening metal structure, to be formed in the third and following metal layers, may be provided to fully overlie the cell and provide additional protection against anomalous readings.

Abstract translation: EEPROM单元被描述为具有在第一金属层中优选形成的屏蔽金属结构，并且在浮置栅极端处以基本上重叠的关系定位。 这就可以通过测量浮置栅极端上的电荷量来获得异常读数的可能性。 可以提供待在第三层和随后的金属层中形成的附加的屏蔽金属结构，以完全覆盖电池，并提供额外的防止异常读数的保护。

公开(公告)号：EP0926737A2

公开(公告)日：1999-06-30

申请号：EP98123137.6

申请日：1998-12-04

Applicant: STMicroelectronics S.r.l.

Inventor： Pio, Federico ,  Sourgen, Laurent c/o STMicroelctronics S.A. ,  Zatelli, Nicola STMicroelectronics Srl ,  Lisart, Mathieu c/o STMicroelectronics S.A.

IPC: H01L23/58 ,  H01L23/556

CPC classification number: H01L27/115 ,  H01L27/02

Abstract: An EEPROM cell is described as having a screening metal structure formed of preference in the first metal layer and located in substantial overlaying relationship at the floating gate terminal. This defeats the possibility of anomalous readings being obtained by measuring the amount of charge on the floating gate terminal. An additional screening metal structure, to be formed in the third and following metal layers, may be provided to fully overlie the cell and provide additional protection against anomalous readings.

Abstract translation: EEPROM单元被描述为具有筛选金属结构（50），优选地在第一金属层中形成并且在浮动栅极端子（30）处基本上覆盖关系。 这样可以通过测量浮栅端子上的电荷量来获得异常读数的可能性。 可以提供要在第三和随后的金属层中形成的另外的筛选金属结构，以完全覆盖电池并提供额外的防止异常读数的保护。