Method for accessing a multilevel nonvolatile memory device of the flash NAND type
    1.
    发明公开
    Method for accessing a multilevel nonvolatile memory device of the flash NAND type 有权
    Verfahren zum Zugreifen auf einenichtflüchtigeMehrpegelspeichervorrichtung vom Typ FLASH NAND

    公开(公告)号:EP1746604A1

    公开(公告)日:2007-01-24

    申请号:EP05106783.3

    申请日:2005-07-22

    CPC classification number: G11C16/0483 G11C11/5628 G11C2211/5641

    Abstract: Multi-level programming (30-42) allows for writing a first and a second bit in selected cells (3) by separately programming (30-32) a first bit (LSB) from a second bit (MSB). Programming (30-32) of the first bit determines a shifting (32) from a first threshold level (A) to a second threshold level (B); programming (36-42) of the second bit requires a preliminary reading (36-40) to detect whether the first bit (LSB) has been modified; performing a first writing step (42) to bring the cell to a third threshold voltage (C) if the first bit has been modified and performing a second writing step (42) to bring the selected cell to a fourth threshold voltage (D) different from the third threshold level if the first bit has not been modified. The memory array (2) divided into a first portion (2a) where data are stored using multiple threshold levels corresponding to a plurality of bits, and a second portion (2b) where data are stored using two threshold levels corresponding to a single bit. For increasing reading and program reliability, during preliminary reading (40) of the second portion (2b) a reading result is forced to correspond to the first threshold level.

    Abstract translation: 多级编程(30-42)允许通过从第二位(MSB)单独编程(30-32)第一位(LSB)来在所选单元(3)中写入第一位和第二位。 第一位的编程(30-32)确定从第一阈值电平(A)到第二阈值电平(B)的移位(32); 第二位的编程(36-42)需要初步读取(36-40)来检测第一位(LSB)是否已被修改; 执行第一写入步骤(42),如果第一位已被修改并使单元进入第三阈值电压(C),并执行第二写入步骤(42)以使所选择的单元达到不同的第四阈值电压(D) 如果第一位未被修改,则从第三阈值水平。 存储器阵列(2)被划分为第一部分(2a),其中使用与多个位相对应的多个阈值级别存储数据;以及第二部分(2b),其中使用与单个位对应的两个阈值电平存储数据。 为了增加读取和编程可靠性,在第二部分(2b)的初步读取(40)期间,读取结果被迫对应于第一阈值水平。

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