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1.发明公开Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 有权次光刻接触结构，特别是用于相变存储器元件，和它们的制备方法
公开(公告)号：EP1439583A1
公开(公告)日：2004-07-21
申请号：EP03425016.7
申请日：2003-01-15
Applicant: STMicroelectronics S.r.l. , OVONYX Inc.
Inventor： Khouri, Osama, , Pollaccia, Giorgio , Pellizzer, Fabio
CPC classification number: H01L45/06 , H01L27/2445 , H01L45/122 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
Abstract: A contact structure (98) for a PCM device is formed by an elongated formation (102) having a longitudinal extension parallel to the upper surface (92) of the body (91) and an end face (110) extending in a vertical plane. The end face (110) is in contact with a bottom portion of an active region (103) of chalcogenic material so that the dimensions of the contact area defined by the end face (110) are determined by the thickness (S) of the elongated formation and by the width (W) thereof.
Abstract translation: 用于PCM器件的接触结构（98）通过在细长结构（102）具有平行于所述主体（91）和在端面（110）的上表面（92）的纵向延伸在一个垂直平面延伸而形成。 端面（110）与硫族化物材料的有源区（103）的底部部分，从而没有通过所述端面（110）中定义的接触区域的尺寸是确定的由细长的厚度（S）开采的接触 形成和由所述宽度（W）上。
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2.发明公开Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 有权次光刻接触结构，特别是用于相变存储器元件，以及它们的Verfaheren用于制备
公开(公告)号：EP1439583A9
公开(公告)日：2005-03-16
申请号：EP03425016.7
申请日：2003-01-15
Applicant: STMicroelectronics S.r.l. , OVONYX Inc.
Inventor： Khouri, Osama, , Pollaccia, Giorgio , Pellizzer, Fabio
CPC classification number: H01L45/06 , H01L27/2445 , H01L45/122 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
Abstract: A contact structure (98) for a PCM device is formed by an elongated formation (102) having a longitudinal extension parallel to the upper surface (92) of the body (91) and an end face (110) extending in a vertical plane. The end face (110) is in contact with a bottom portion of an active region (103) of chalcogenic material so that the dimensions of the contact area defined by the end face (110) are determined by the thickness (S) of the elongated formation and by the width (W) thereof.
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3.发明授权Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 有权次光刻接触结构，特别是用于相变存储器元件，和它们的制备方法
公开(公告)号：EP1439583B1
公开(公告)日：2013-04-10
申请号：EP03425016.7
申请日：2003-01-15
Applicant: STMicroelectronics Srl , Ovonyx Inc.
Inventor： Khouri, Osama, , Pollaccia, Giorgio , Pellizzer, Fabio
CPC classification number: H01L45/06 , H01L27/2445 , H01L45/122 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
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