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1.发明授权Process for manufacturing MOS devices using dual-polysilicon layer technology 有权一种生产具有两层多晶硅技术MOS器件过程
公开(公告)号：EP1434257B1
公开(公告)日：2010-09-15
申请号：EP03104939.8
申请日：2003-12-23
Applicant: STMicroelectronics Srl
Inventor： CONTIN, Valentina Tessa , CAIMI, Carlo , MERLANI, Davide , CAPRARA, Paolo
IPC: H01L27/115 , H01L21/8247 , H01L29/423
CPC classification number: H01L27/11526 , H01L21/28273 , H01L27/105 , H01L27/11524 , H01L27/11534
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2.发明授权MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact 有权具有侧接触和生产MOS器件及其由两个多晶硅层的装置
公开(公告)号：EP1434258B1
公开(公告)日：2011-07-20
申请号：EP03104938.0
申请日：2003-12-23
Applicant: STMicroelectronics Srl
Inventor： CAIMI, Carlo , CAPRARA, Paolo , CONTIN, Valentina Tessa , MERLANI, Davide
IPC: H01L21/8247 , H01L27/115 , H01L29/423
CPC classification number: H01L29/66825 , H01L21/28273 , H01L29/42324 , H01L29/511
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