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1.发明授权Floating gate non-volatile memory cell with low erasing voltage and manufacturing method 失效具有制备浮置栅极和一个低擦除电压，和处理的非易失性存储器单元
公开(公告)号：EP0833393B1
公开(公告)日：2011-12-14
申请号：EP96830493.1
申请日：1996-09-30
Applicant: STMicroelectronics Srl
Inventor： Cappelletti, Paolo
IPC: H01L29/788 , H01L29/423 , H01L29/51
CPC classification number: H01L21/28185 , H01L21/28176 , H01L21/28194 , H01L21/28202 , H01L21/2822 , H01L29/42332 , H01L29/42336 , H01L29/49 , H01L29/495 , H01L29/513 , H01L29/518
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