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1.Process for manufacturing a dual charge storage location memory cell 有权
Title translation: 一种用于具有两个存储区的制造存储单元的方法公开(公告)号:EP1300888B1
公开(公告)日:2013-03-13
申请号:EP01830634.0
申请日:2001-10-08
Applicant: STMicroelectronics Srl
Inventor: Caprara, Paolo , Brambilla, Claudio , Cereda, Manlio Sergio
IPC: H01L29/792 , H01L21/8246 , H01L21/336
CPC classification number: H01L27/11568 , H01L27/115 , H01L29/792 , H01L29/7923