公开(公告)号：EP2306508B1

公开(公告)日：2012-11-28

申请号：EP10182502.4

申请日：2010-09-29

Applicant: STMicroelectronics Srl

Inventor： Causio, Alessandro ,  Colpani, Paolo ,  Mariani, Simone Dario

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0653 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

Abstract: An integrated device includes a semiconductor body (11), in which an STI insulating structure (15) is formed, laterally delimiting first active areas (17) and at least one second active area (18) in a low-voltage region (12) and in a power region (13) of the semiconductor body, respectively. Low-voltage CMOS components (50, 51) are housed in the first active areas (17). Formed in the second active area (18) is a power component (52), which includes a source region (45), a body region (32), a drain-contact region (46), and at least one LOCOS insulation region (27), arranged between the body region (32) and the drain-contact region (46) and having a prominent portion (27a) that emerges from a surface (11a) of the semiconductor body (11), and an embedded portion (27b) inside it. The prominent portion (27a) of the LOCOS insulation region (27) has a volume greater than that of the embedded portion (27b).

公开(公告)号：EP2306509A1

公开(公告)日：2011-04-06

申请号：EP10182571.9

申请日：2010-09-29

Applicant: STMicroelectronics Srl

Inventor： Colpani, Paolo

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/74 ,  H01L21/336

CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

Abstract: An integrated device includes a semiconductor body (11), in which an STI insulation structure (15) is formed, which delimits laterally first active areas (17) and at least one second active area (18), respectively, in a low-voltage region (12) and in a power region (13) of the semiconductor body (11). The integrated device moreover includes low-voltage CMOS components (50, 51), accommodated in the first active areas (17), and a power component (52) in the second active area (18). The power component (52) has a source region (45), a body region (32), a drain-contact region (46), and at least one field-insulating region (27), set between the body region (32) and the drain-contact region (46). The field-insulating region (27) is provided entirely on the semiconductor body (11).

Abstract translation: 集成器件包括其中形成有STI绝缘结构（15）的半导体本体（11），其分别以低电压限制横向第一有源区域（17）和至少一个第二有效区域（18） 区域（12）和半导体本体（11）的功率区域（13）中。 集成器件还包括容纳在第一有源区（17）中的低电压CMOS元件（50,51）和第二有源区（18）中的功率元件（52）。 功率部件（52）具有源极区域（45），体区域（32），漏极接触区域（46）和至少一个场绝缘区域（27） 和漏极 - 接触区域（46）。 场绝缘区域（27）全部设置在半导体本体（11）上。