公开(公告)号：EP2482286A1

公开(公告)日：2012-08-01

申请号：EP12153545.4

申请日：2012-02-01

Applicant: STMicroelectronics Srl

Inventor： Scalia, Antonio Maria ,  Greco, Maurizio

IPC: G11C11/22

CPC classification number: G11C11/22 ,  B23Q1/0018 ,  B23Q3/061 ,  B23Q3/062 ,  B23Q3/082

Abstract: A method for non-destructive reading of a logic datum to be read stored in a memory (10) including a first word line (18a), a first bit line (16a), a second bit line (17a), and a first ferroelectric transistor (14) including a layer of ferroelectric material (26) in a stable state of polarization that can be associated to a high logic value or a low logic value of the logic datum to be read; the ferroelectric transistor is connected between the first and second bit lines, and has a control terminal (20c) coupled to the first word line. The method comprises the steps of: applying to the first word line (18a) a reading voltage (V read ) such as not to cause a variation of the stable state of polarization of the layer of ferroelectric material (26); generating a difference of potential (V sense ) between the first and second bit lines (16a, 17a); generating an output current (i TOT ); comparing the output current (i TOT ) with a plurality of comparison values; and determining the logic value of the logic datum to be read on the basis of the comparison.

Abstract translation: 一种用于对包含第一字线（18a），第一位线（16a），第二位线（17a）和第一铁电体（17a）的存储器（10）中存储的要读取的逻辑数据进行非破坏性读取的方法 晶体管（14）包括处于稳定的极化状态的铁电材料层（26），其可以与待读取的逻辑数据的高逻辑值或低逻辑值相关联; 铁电晶体管连接在第一和第二位线之间，并且具有耦合到第一字线的控制端子（20c）。 该方法包括以下步骤：向第一字线（18a）施加读取电压（V读），例如不引起铁电材料层26的稳定极化状态的变化; 产生第一和第二位线（16a，17a）之间的电位差（V sense）; 产生输出电流（i TOT）; 将输出电流（i TOT）与多个比较值进行比较; 并基于该比较来确定要读取的逻辑数据的逻辑值。

公开(公告)号：EP2482287A1

公开(公告)日：2012-08-01

申请号：EP12153546.2

申请日：2012-02-01

Applicant: STMicroelectronics Srl

Inventor： Scalia, Antonio Maria ,  Greco, Maurizio

IPC: G11C11/22

CPC classification number: G11C11/22

Abstract: A method for non-destructive reading of an information datum stored in a memory (10) that includes a first word line (18a), a first bit lines and a second bit lines, and a first ferroelectric transistor (14), which is connected between the bit liness and has a control terminal (20c) coupled to the first word line, the method comprising the steps of: applying to the first word line (18a) a first reading electric quantity (Vread); generating a first difference of potential (Vsense) between the first and second bit liness (16a, 17a); generating a first output electric quantity (i TOT ; V a ); applying to the first word line (18a) a second reading electric quantity (V ref ); generating a second difference of potential (Vsense) between the first and second bit liness (16a, 17a); generating a second output electric quantity (i TOT ; V b ); comparing the first and second output electrical quantities (V a , V b ) with one another; and, on the basis of a result of said comparison, determining the logic value of the information datum.

Abstract translation: 一种存储在存储器（10）中的信息数据的非破坏性读取方法，该存储器包括第一字线（18a），第一位线和第二位线以及连接的第一铁电晶体管（14） 在所述位置之间并具有耦合到所述第一字线的控制端子（20c），所述方法包括以下步骤：向所述第一字线（18a）施加第一读取电量（Vread）; 产生第一和第二位亮度（16a，17a）之间的第一电位差（Vsense）; 产生第一输出电量（i TOT; V a）; 向第一字线（18a）施加第二读数电量（V ref）; 产生所述第一和第二位亮度（16a，17a）之间的第二电位差（Vsense）; 产生第二输出电量（i TOT; V b）; 将第一和第二输出电量（V a，V b）彼此进行比较; 并且基于所述比较的结果，确定信息数据的逻辑值。