公开(公告)号：EP2339637A1

公开(公告)日：2011-06-29

申请号：EP10197215.6

申请日：2010-12-28

Applicant: STMicroelectronics Srl

Inventor： Micciché, Monica ,  Grimaldi, Antonio Giuseppe ,  Adragna, Claudio

IPC: H01L29/78 ,  H01L29/417 ,  H01L27/088 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H02M3/335

CPC classification number: H01L29/7816 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66681 ,  H02M3/33592 ,  Y02B70/1475

Abstract: An integrated power MOSFET device formed by a substrate (19, 65); an epitaxial layer (13; 68; 80, 81) of N type ; a sinker region (17b) of P type, extending through the epitaxial layer from the top surface and in electrical contact with the substrate; a body region (22), of P type, extending within the sinker region from the top surface; a source region (25), of N type, extending within the body region from the top surface, the source region delimiting a channel region (22a); a gate region (19); a source contact (30), electrically connected to the body region and to the source region; a drain contact (31), electrically connected to the epitaxial layer (13; 81); and a source metallization region (104), extending over the rear surface and electrically connected to the substrate and to the sinker region.

Abstract translation: 由衬底（19,65）形成的集成功率MOSFET器件; N型外延层（13; 68; 80,81）; P型沉降片区域（17b），从顶表面延伸穿过外延层并与衬底电接触; P型的主体区域（22），从所述顶表面延伸到所述沉降片区域内; 源区域（25），其从所述顶表面在所述体区域内延伸，所述源区域限定沟道区域（22a）; 栅极区域（19）; 源极触点（30），电连接到所述主体区域和所述源极区域; 电连接到外延层（13; 81）的漏极接触（31）; 以及源极金属化区域（104），其在所述后表面上延伸并且电连接到所述衬底和所述沉降弧区域。

公开(公告)号：EP2317553B1

公开(公告)日：2012-12-26

申请号：EP10188931.9

申请日：2010-10-26

Applicant: STMicroelectronics Srl

Inventor： Micciche', Monica ,  Grimaldi, Antonio Giuseppe ,  Bazzano, Gaetano ,  Frazzetto, Nicolò

IPC: H01L27/06 ,  H01L29/78

CPC classification number: H01L27/0694 ,  H01L29/0619 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7813