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1.Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element 有权
Title translation: 一种制备铜兼容相变存储元件和对应的相变存储器元件的方法公开(公告)号:EP2017906B1
公开(公告)日:2011-03-23
申请号:EP07425437.6
申请日:2007-07-17
Applicant: STMicroelectronics Srl
Inventor: Kuo, Charles , Kim, Yudong
IPC: H01L45/00
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/126 , H01L45/1266 , H01L45/141 , H01L45/144 , H01L45/1683