-
1.发明授权Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof 有权相同的功率半导体器件具有绝缘栅和与肖特基二极管和方法用于制备
公开(公告)号：EP2259327B1
公开(公告)日：2014-04-02
申请号：EP10180038.1
申请日：2002-11-14
Applicant: STMicroelectronics Srl
Inventor： Magrì, Angelo , Frisina, Ferruccio
IPC: H01L29/78 , H01L21/336 , H01L21/265 , H01L29/872
CPC classification number: H01L29/66719 , H01L21/26586 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/66727 , H01L29/7806 , H01L29/7839 , H01L29/872
Search Results
1
records
(took 0.019 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
