-
1.发明授权Manufacturing method of an insulated gate power semiconductor device with Schottky diode 有权一种制造功率半导体器件的方法具有绝缘栅和与肖特基二极管
公开(公告)号：EP1420457B1
公开(公告)日：2012-01-11
申请号：EP02425695.0
申请日：2002-11-14
Applicant: STMicroelectronics Srl
Inventor： Magri, Angelo , Frisina, Ferruccio
IPC: H01L29/78 , H01L21/336 , H01L27/07 , H01L29/872
CPC classification number: H01L29/66719 , H01L21/26586 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/66727 , H01L29/7806 , H01L29/7839 , H01L29/872
Search Results
1
records
(took 0.018 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
