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1.发明授权
公开(公告)号：EP1745505B1
公开(公告)日：2011-08-17
申请号：EP05738025.5
申请日：2005-04-18
Applicant: STMicroelectronics Srl
Inventor： PONZA, Anna , DEPETRO, Riccardo , MONTANINI, Pietro
IPC: H01L21/78
CPC classification number: H01L21/78
Abstract: A process for the fabrication of an integrated device in a semiconductor chip envisages: forming a semiconductor layer (5') partially suspended above a semiconductor substrate (2) and constrained to the substrate (2) by temporary anchorages (10, 15'); dividing the layer (5') into a plurality of portions (13) laterally separated from one another; and removing the temporary anchorages (10, 15'; 38), in order to free the portions (13).
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