Abstract:
A microelectromechanical probe (135). The probe is adapted to contact a corresponding terminal of an integrated circuit, integrated on at least one chip (102) of a semiconductor material wafer (110) during a test phase of the wafer. The probe includes a support structure (310, 330, 355, 325, 345) comprising a first access terminal and a second access terminal; said support structure defining a conductive path between said first access terminal and said second access terminal. The probe further includes a probe region (230) connected to the support structure; said probe region comprises at least one conductive tip adapted to contact the corresponding terminal of the integrated circuit during the test phase for providing at least one test signal received from the first access terminal and the second access terminal to the integrated circuit through at least one portion of the conductive path, and/or providing at least one test signal generated by the integrated circuit to at least one between the first access terminal and the second access terminal trough at least one portion of the conductive path. Said probe region is arranged on the conductive path of the support structure between said first access terminal and said second access terminal.
Abstract:
An electronic communications device, including: a body (32) of semiconductor material defining at least one integrated electronic circuit and having a top surface (32a); an electromagnetic shield (36); a radiant element (42); and a capacitive element (C) formed by a first electrode (50) and a second electrode (52), the radiant element (42) being arranged on top of the top surface (32a) and being ohmically connected to the first electrode (50) and the second electrode (52) by means of a first connection element (54) and a second connection element (56), respectively, the electromagnetic shield (36) being arranged between the radiant element (42) and the top surface (32a) and forming at least the second electrode.