Improved MEMS probe for probe cards for integrated circuits
    1.
    发明公开
    Improved MEMS probe for probe cards for integrated circuits 审中-公开
    Verbesserte MEMS-SondefürSondenkartenfürintegrierte Schaltungen

    公开(公告)号:EP2204656A1

    公开(公告)日:2010-07-07

    申请号:EP09181012.7

    申请日:2009-12-30

    Inventor: Pagani, Alberto

    CPC classification number: G01R1/06716 G01R1/06727 G01R1/06733

    Abstract: A microelectromechanical probe (135). The probe is adapted to contact a corresponding terminal of an integrated circuit, integrated on at least one chip (102) of a semiconductor material wafer (110) during a test phase of the wafer. The probe includes a support structure (310, 330, 355, 325, 345) comprising a first access terminal and a second access terminal; said support structure defining a conductive path between said first access terminal and said second access terminal. The probe further includes a probe region (230) connected to the support structure; said probe region comprises at least one conductive tip adapted to contact the corresponding terminal of the integrated circuit during the test phase for providing at least one test signal received from the first access terminal and the second access terminal to the integrated circuit through at least one portion of the conductive path, and/or providing at least one test signal generated by the integrated circuit to at least one between the first access terminal and the second access terminal trough at least one portion of the conductive path. Said probe region is arranged on the conductive path of the support structure between said first access terminal and said second access terminal.

    Abstract translation: 微机电探针(135)。 探针适于在晶片的测试阶段期间与集成在半导体材料晶片(110)的至少一个芯片(102)上的集成电路的相应端子接触。 探针包括包括第一接入终端和第二接入终端的支持结构(310,330,355,325,345) 所述支撑结构限定所述第一接入终端和所述第二接入终端之间的导电路径。 所述探头还包括连接到所述支撑结构的探针区域(230) 所述探针区域包括至少一个导电尖端,适于在测试阶段期间接触集成电路的相应端子,以便通过至少一个部分提供从第一接入终端和第二接入终端接收到集成电路的至少一个测试信号 和/或将集成电路产生的至少一个测试信号提供给第一接入终端和第二接入终端之间的至少一个,至少导电路径的一部分。 所述探针区域布置在所述第一接入终端和所述第二接入终端之间的所述支撑结构的导电路径上。

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