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    Method for multilevel programming of phase change memory cells using a percolation algorithm
    2.
    发明公开
    Method for multilevel programming of phase change memory cells using a percolation algorithm 有权
    用于编程相变存储器单元与使用Perkolationsalgorithmus多个存储器级方法

    公开(公告)号：EP2249351A1

    公开(公告)日：2010-11-10

    申请号：EP10173621.3

    申请日：2005-06-03

    Applicant: STMicroelectronics Srl

    Inventor： Pirovano, Agostino ,  Pellizzer, Fabio

    IPC: G11C11/56 ,  G11C16/02 ,  H01L45/00

    CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/79

    Abstract: A method and apparatus for programming a phase change memory cell (2) is disclosed. A phase change memory cell (2) includes a memory element (10) of a phase change material having a first state ("11"), in which the phase change material is crystalline and has a minimum resistance level, a second state ("00") in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states with resistance levels there between. The method includes using programming pulses to program the phase change memory cell (2) in either the set, reset, or one of the intermediate states. To program in the intermediate states, a programming pulse creates a crystalline percolation path having an average diameter (D) through amorphous phase change material and a second programming pulse modifies the diameter (D) of the crystalline percolation path to program the phase change memory cell to the proper current level.

    Abstract translation: 一种用于编程相变存储器单元（2）的方法和装置是游离缺失盘。 一种相变存储单元（2）包括相变材料的具有第一状态（“11”）的存储元件（10），（其中，所述相变材料是结晶的，并具有最小电阻水平，第二状态“ 00“），其中所述相变材料是无定形的并且具有最大电阻水平，并且中间状态具有抗性水平存在之间的多个。 该方法包括使用编程脉冲到相变存储器单元（2）的任一组进行编程，重置或中间状态中的一个。 在中间状态编程，在编程脉冲创建具有平均直径（D）通过非晶相变材料和第二编程脉冲的结晶渗滤路径修改结晶渗滤路径的直径（D）的相变存储单元进行编程 到适当的电流电平。

    Method for multilevel programming of phase change memory cells using a percolation algorithm
    3.
    发明公开
    Method for multilevel programming of phase change memory cells using a percolation algorithm 审中-公开
    用于编程相变存储器单元与使用Perkolationsalgorithmus多个存储器级方法

    公开(公告)号：EP2309516A1

    公开(公告)日：2011-04-13

    申请号：EP10171507.6

    申请日：2005-06-03

    Applicant: STMicroelectronics Srl

    Inventor： Pirovano, Agostino ,  Pellizzer, Fabio

    IPC: G11C11/56 ,  G11C13/00

    CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/79

    Abstract: A method and apparatus for programming a phase change memory cell (2) is disclosed. A phase change memory cell (2) includes a memory element (10) of a phase change material having a first state ("11"), in which the phase change material is crystalline and has a minimum resistance level, a second state ("00") in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states with resistance levels there between. The method includes using programming pulses to program the phase change memory cell (2) in either the set, reset, or one of the intermediate states. To program in the intermediate states, a programming pulse creates a crystalline percolation path having an average diameter (D) through amorphous phase change material and a second programming pulse modifies the diameter (D) of the crystalline percolation path to program the phase change memory cell to the proper current level.

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