公开(公告)号：EP3261141A1

公开(公告)日：2017-12-27

申请号：EP16425063.1

申请日：2016-06-24

Applicant: STMicroelectronics Srl

Inventor： Zuliani, Paola ,  Confalonieri, Gianluigi ,  Gilardini, Annalisa ,  Prelini, Carlo Luigi

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1683

Abstract: The proposed phase-change memory cell comprises a substrate (2) housing a selection transistor, an electrical insulation layer (10) having a conductive through via (11a) electrically coupled to a first electrode (4) of the transistor, a heater element (34) including a first portion in electrical contact with the conductive through via and a second portion that extends orthogonal to the first portion, a first protection element (32) extending on the first and second portions of the heater element, a second protection element (40) extending in direct lateral contact with the first portion of the heater element and with the first protection element, and a phase-change region (50) extending over the heater element in electrical and thermal contact therewith.

Abstract translation: 所提出的相变存储器单元包括容纳选择晶体管的衬底（2），具有电耦合到晶体管的第一电极（4）的导电通孔（11a）的电绝缘层（10），加热器元件 包括与所述导电通孔电接触的第一部分和与所述第一部分正交延伸的第二部分，在所述加热器元件的第一部分和第二部分上延伸的第一保护元件（32），第二保护元件（ 40）与所述加热器元件的第一部分和所述第一保护元件直接横向接触地延伸，以及在所述加热器元件上方延伸的相变区域（50），所述相变区域与所述加热器元件电接触并热接触。