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1.发明授权Programming method of the memory cells in a multilevel non-volatile memory device 有权存储器单元中的非易失性多电平存储器阵列的编程方法
公开(公告)号：EP1363292B1
公开(公告)日：2012-08-08
申请号：EP03010684.3
申请日：2003-05-13
Applicant: STMicroelectronics Srl
Inventor： Pascucci, Luigi , Rolandi, Paolo , Riva, Marco
CPC classification number: G11C11/5628
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