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1.发明授权Method for manufacturing non-volatile memory cells and periphery transistors 有权一种用于非易失性存储单元和外围晶体管的制备方法
公开(公告)号：EP1677348B1
公开(公告)日：2012-01-18
申请号：EP05028380.3
申请日：2005-12-23
Applicant: STMicroelectronics Srl
Inventor： Pavan, Alessia , Servalli, Giorgio , Clementi, Gesare
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11526 , H01L27/105 , H01L27/11539
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2.发明授权Non volatile memory electronic device integrated on a semiconductor substrate 有权在具有非易失性存储器的半导体衬底集成电子器件
公开(公告)号：EP1804289B1
公开(公告)日：2011-11-23
申请号：EP06026787.9
申请日：2006-12-22
Applicant: STMicroelectronics Srl
Inventor： Servalli, Giorgio , Capetti, Gianfranco , Cantú, Pietro
IPC: H01L21/8247 , H01L27/115 , G03F1/14 , H01L21/768
CPC classification number: H01L27/115 , H01L27/11519 , H01L27/11521
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