公开(公告)号：US20210343528A1

公开(公告)日：2021-11-04

申请号：US17289205

申请日：2018-11-09

Applicant: STRATIO

Inventor： Jae Hyung LEE ,  Yaul NA ,  Youngsik KIM

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8238 ,  H01L23/532 ,  H01L27/092

Abstract: A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate with a mask layer defining a region not covered by the mask layer. The semiconductor structure includes a first portion located adjacent to the mask layer and a second portion located away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer located adjacent to the first portion. The second portion has a third height that is equal to, or greater than the second height. The method also includes forming a filling layer over at least the first portion; and, subsequently removing at least a portion of the semiconductor structure that is located above the second height. Devices made by this method are also disclosed.