Abstract:
A method and system for double-layer continuous Cz crystal growing are disclosed. The system includes a crucible assembly including an inner crucible in an outer crucible, the inner crucible defining a growth region and a feed region, the crucible assembly containing molten material (e.g., silicon). The system also includes a susceptor, a continuous feed supply for providing a continuous feed to the feed region, and a temperature control system disposed about the susceptor and configured to cool a region of silicon at a bottom of the growth region to form a solid layer, the solid layer facilitating reducing an oxygen concentration in the growing crystal. The method includes separating molten material into the growth region and the feed region, initiating cooling at a bottom of the growth region, and solidifying a region of material at the bottom of the growth region, such that a solid layer is formed.
Abstract:
A system for degassing granular polysilicon includes a baking container having an interior space for containing granular polysilicon. The system also includes a heat source for heating the granular polysilicon within the interior space of the baking container. The system further includes a drive mechanism operatively connected to the baking container for mechanically agitating the granular polysilicon within the interior space during heating.
Abstract:
A method of recycling monocrystalline segments cut from a monocrystalline ingot of semiconductor or solar grade material is provided. The method includes removing a first monocrystalline segment from the monocrystalline ingot, connecting the first monocrystalline segment to a second monocrystalline segment to form a chain of monocrystalline segments, and introducing the chain of monocrystalline segments into a melt of semiconductor or solar grade material.
Abstract:
A system for extracting liquid is provided. The system includes a vacuum source and a nozzle having a wettable plunger and a vacuum tube connected in flow communication with the vacuum source. When the plunger is partly submerged in the liquid and the vacuum source is actuated to initiate a flow of gas through the vacuum tube, droplets of the liquid separate from at least a portion of the unsubmerged part of the plunger and become suspended in the gas flow. The system also includes a cooling structure positioned adjacent to the vacuum tube to facilitate solidifying the droplets suspended in the gas flowing through the vacuum tube.
Abstract:
A fluidized bed reactor includes a polysilicon preparation liner having a cylindrical tube extending along an axis. The tube includes an inner surface and an outer surface defining a tube thickness therebetween. The polysilicon liner also includes at least one layer of a wrap wound about the outer tube surface. The wrap prevents radial expansion of the tube.