中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

43 records (took 0.022 seconds)

    METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
    1.
    发明申请
    METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
    具有不同P型和N型区域结构的太阳能电池的金属化

    公开(公告)号：WO2017173385A1

    公开(公告)日：2017-10-05

    申请号：PCT/US2017/025574

    申请日：2017-03-31

    Applicant: SUNPOWER CORPORATION

    Inventor： SMITH, David D. ,  WEIDMAN, Timothy ,  HARRINGTON, Scott ,  BALU, Venkatasubramani

    IPC: H01L31/18 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0224

    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

    Abstract translation: 描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池可以包括具有光接收表面和背表面的衬底。 第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。 第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。 第三薄介电层设置在第一多晶硅发射极区的暴露的外部上，并且横向设置在第一和第二多晶硅发射极区之间。 第一导电接触结构设置在第一多晶硅发射区上。 第二导电接触结构设置在第二多晶硅发射区上。 还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

    BUILT-IN BYPASS DIODE
    2.
    发明申请
    BUILT-IN BYPASS DIODE 审中-公开
    内置旁路二极管

    公开(公告)号：WO2015094988A1

    公开(公告)日：2015-06-25

    申请号：PCT/US2014/070164

    申请日：2014-12-12

    Applicant: SUNPOWER CORPORATION

    Inventor： SMITH, David D. ,  RIM, Seung Bum

    IPC: H01L31/044

    CPC classification number: H01L31/02167 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/0745 ,  Y02E10/50

    Abstract: A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.

    Abstract translation: 旁路二极管可以包括设置在太阳能电池的衬底上方的第一导电类型的第一导电区域和设置在第一导电区域上方的第二导电类型的第二导电区域。 旁路二极管可以包括直接设置在第一和第二导电区域之间的薄介电区域。

    PASSIVATION LAYER FOR SOLAR CELLS
    4.
    发明申请
    PASSIVATION LAYER FOR SOLAR CELLS 审中-公开
    太阳能电池的钝化层

    公开(公告)号：WO2016160535A1

    公开(公告)日：2016-10-06

    申请号：PCT/US2016/024120

    申请日：2016-03-24

    Applicant: SUNPOWER CORPORATION

    Inventor： RIM, Seung Bum ,  SMITH, David D. ,  JOHNSON, Michael C. ,  SIMMONS, Christine Bourdet

    IPC: H01L31/0392 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18

    CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0747 ,  Y02E10/50

    Abstract: Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.

    Abstract translation: 描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。 在一个示例中，太阳能电池包括具有第一表面和第二表面的基板。 多个发射极区域设置在基板的第一表面上并且彼此间隔开。 非晶硅钝化层设置在多个发射极区域中的每一个上，并且在多个发射极区域中的每一个之间，直接位于衬底的第一表面的暴露部分上。

    EPITAXIAL SILICON SOLAR CELLS WITH MOISTURE BARRIER
    6.
    发明申请
    EPITAXIAL SILICON SOLAR CELLS WITH MOISTURE BARRIER 审中-公开
    具有水分阻挡层的外延硅太阳能电池

    公开(公告)号：WO2015047950A1

    公开(公告)日：2015-04-02

    申请号：PCT/US2014/056786

    申请日：2014-09-22

    Applicant: SUNPOWER CORPORATION

    Inventor： SMITH, David D.

    IPC: H01L31/00

    CPC classification number: H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A thin epitaxial silicon solar cell includes one or more layers of doped oxides on the backside. A silicon nitride layer that serves as a moisture barrier is formed on the one or more layers of doped oxides (207). The doped oxides provide dopants for forming doped regions in an epitaxial silicon layer. Metal contacts are electrically coupled to the doped regions through the silicon nitride layer and the one or more layers of doped oxides (208, 209).

    Abstract translation: 薄的外延硅太阳能电池在背面包括一层或多层掺杂的氧化物。 在一层或多层掺杂氧化物（207）上形成用作防潮层的氮化硅层。 掺杂的氧化物提供用于在外延硅层中形成掺杂区的掺杂剂。 金属触点通过氮化硅层和一个或多个掺杂氧化物层（208,209）电耦合到掺杂区域。

    TRI-LAYER SEMICONDUCTOR STACKS FOR PATTERNING FEATURES ON SOLAR CELLS
    8.
    发明申请
    TRI-LAYER SEMICONDUCTOR STACKS FOR PATTERNING FEATURES ON SOLAR CELLS 审中-公开
    三层半导体堆栈用于图案化太阳能电池的特性

    公开(公告)号：WO2017173383A1

    公开(公告)日：2017-10-05

    申请号：PCT/US2017/025571

    申请日：2017-03-31

    Applicant: SUNPOWER CORPORATION

    Inventor： TRACY, Kieran Mark ,  SMITH, David D. ,  BALU, Venkatasubramani ,  MASAD, Asnat ,  WALDHAUER, Ann

    IPC: H01L31/0392 ,  H01L31/06 ,  H01L31/042 ,  H01L31/18

    Abstract: Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

    Abstract translation: 本文描述了用于图案化太阳能电池上的特征的三层半导体堆叠以及所得到的太阳能电池。 在一个示例中，太阳能电池包括衬底。 半导体结构设置在衬底上方。 该半导体结构包括直接设置在第一半导体层上的P型半导体层。 第三半导体层直接设置在P型半导体层上。 第三半导体层的最外边缘从第一半导体层的最外边缘横向凹入一个宽度。 P型半导体层的最外边缘从第三半导体层的最外边缘向第三半导体层的最外边缘倾斜。 导电接触结构电连接到半导体结构。

    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION
    9.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION 审中-公开
    太阳能电池区域制造使用基底层离子植入

    公开(公告)号：WO2016160432A1

    公开(公告)日：2016-10-06

    申请号：PCT/US2016/023640

    申请日：2016-03-22

    Applicant: SUNPOWER CORPORATION

    Inventor： WESTERBERG, Staffan ,  WEIDMAN, Timothy ,  SMITH, David D.

    IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/036

    CPC classification number: H01L31/1864 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.

    Abstract translation: 描述了使用衬底级离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过离子注入在第一导电类型的第一浓度的轻掺杂区域中形成半导体衬底中的轻掺杂区域。 该方法还包括通过离子注入形成第一导电类型的第一多个掺杂剂区域，第二高浓度，第一多个掺杂剂区域与轻掺杂区域的第一部分重叠。 该方法还涉及通过离子注入形成第二多个掺杂剂区域，第二多个掺杂剂区域具有高于第一浓度的浓度的第二导电类型，并且第二多个掺杂剂区域与轻微的第二部分重叠 并且与第一多个掺杂区域交替而不重叠。

    RELATIVE DOPANT CONCENTRATION LEVELS IN SOLAR CELLS
    10.
    发明申请
    RELATIVE DOPANT CONCENTRATION LEVELS IN SOLAR CELLS 审中-公开
    太阳能电池中的相对浓度浓度水平

    公开(公告)号：WO2015183703A1

    公开(公告)日：2015-12-03

    申请号：PCT/US2015/032070

    申请日：2015-05-21

    Applicant: SUNPOWER CORPORATION

    Inventor： SMITH, David D. ,  WESTERBERG, Staffan

    IPC: H01L31/0256 ,  H01L31/06 ,  H01L31/04

    CPC classification number: H01L31/065 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1868 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell may include a substrate having a front side facing the sun to receive solar radiation during normal operation and a backside opposite the front side. The solar cell may further include a polysilicon layer formed over the backside of the substrate. A P-type diffusion region and an N-type diffusion region may be formed in the polysilicon layer to provide a butting PN junction. The P-type diffusion region may have a first dopant concentration level and the N-type diffusion region may have a second dopant concentration level such that the first dopant concentration level is less than the second dopant concentration level.

    Abstract translation: 太阳能电池可以包括在正常操作期间具有面向太阳以接收太阳辐射的正面的基板和与正面相反的背面。 太阳能电池还可以包括形成在衬底背面上的多晶硅层。 可以在多晶硅层中形成P型扩散区和N型扩散区，以提供对接PN结。 P型扩散区可以具有第一掺杂剂浓度水平，并且N型扩散区可以具有第二掺杂剂浓度水平，使得第一掺杂剂浓度水平小于第二掺杂剂浓度水平。

Patent Agency Ranking