公开(公告)号：WO1996001502A1

公开(公告)日：1996-01-18

申请号：PCT/US1995009063

申请日：1995-06-22

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  EDDY, Michael, M.

IPC: H01L39/00

CPC classification number: H01L39/2461

Abstract: A device and method for providing a device suitable for microwave and/or RF applications comprising an HTS film (4) having low surface resistance and exhibiting linear response characteristics at high RF current density is provided. Broadly, a two-step process of first, in situ forming an intermediate layer of YBCO (2) (or a structural analog) used as a nucleation layer on a support layer (1), and second forming a thallium and copper oxide based film (4) on the intermediate layer (2) by precursor (3) deposition followed by a post-deposition thermal processing for crystallization.

Abstract translation: 提供一种用于提供适合于微波和/或RF应用的装置的装置和方法，其包括具有低表面电阻并且以高RF电流密度呈现线性响应特性的HTS膜（4）。 一般来说，首先在载体层（1）上原位形成用作成核层的YBCO（2）（或结构类似物）的中间层的第二步骤，然后形成铊和氧化铜基膜 （4）通过前体（3）沉积在中间层（2）上，随后进行用于结晶的沉积后热处理。

公开(公告)号：WO1992022426A1

公开(公告)日：1992-12-23

申请号：PCT/US1992004602

申请日：1992-06-01

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  YOUNG, Kwo-Hsiung ,  SUN, Jonathan, Zan-Hong

IPC: B32B15/00

CPC classification number: H01L39/2458 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93 ,  Y10S505/701

Abstract: An a-axis high temperature superconducting film having preferential in-plane orientation is formed. In the preferred embodiment, an a-axis film has substantial amounts of superconductor (12) oriented with its c-axis in a unified direction parallel to the substrate (16). YBCO on neodium gallate (110) plane has resulted in a high temperature superconductor with over 80 % by volume being a-axis with in-plane orientation. These films are epitaxial. The preferred method of film growth is for in situ growth by a laser ablation. Preferably, the a-axis film is nucleated by laser ablation onto a substrate which is at a temperature of 50 to 100 DEG C less than the optimal substrate temperature for c-axis growth. Optionally, once a-axis nucleation has begun, the substrate temperature may be increased to optimize superconductor properties.

Abstract translation: 形成具有优先面内取向的a轴高温超导膜。 在优选实施例中，a轴膜具有大量的以其c轴在平行于衬底（16）的统一方向定向的超导体（12）。 YBCO在没食子酸镓（110）面上产生了高温超导体，超过80体积％是具有面内取向的a轴。 这些膜是外延的。 膜生长的优选方法是通过激光烧蚀进行原位生长。 优选地，通过激光烧蚀将a轴膜成核到比c轴生长的最佳衬底温度低50至100℃的衬底上。 任选地，一旦开始a轴成核，可以增加衬底温度以优化超导体性质。

公开(公告)号：WO1995028750A1

公开(公告)日：1995-10-26

申请号：PCT/US1995003993

申请日：1995-03-31

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  HEY-SHIPTON, Gregory, Lynton ,  KUNIMOTO, Wallace, Yoshito ,  SCHAREN, Michael, James ,  ROHLFING, Stephan, Michael ,  KAPOLNEK, David, J.

IPC: H01R04/68

CPC classification number: H01R4/68 ,  H01P5/085

Abstract: An electrical interconnect provides a path between cryogenic or cryocooled circuitry and ambient temperatures. As a system, a cryocable (10) is combined with a trough-line contact or transition (20). In the preferred embodiment, the cryocable (10) comprises a conductor (11) disposed adjacent an insulator (12) which is in turn disposed adjacent another conductor (13). The components are sized so as to balance heat load through the cryocable (10) with the insertion loss. In the most preferred embodiment, a coaxial cryocable (10) has a center conductor (11) surrounded by a dielectric (12) (e.g. Teflon ) surrounded by an outer conductor (13) which has a thickness between about 6 and 20 microns. The heat load is preferably less than one Watt, and most preferably less than one tenth of a Watt, with an insertion loss less than one decibel. In another aspect of the invention, a trough-line contact or transition (20) is provided in which the center conductor (11) is partially enveloped by dielectric (12) to form a relatively flat portion (28). The preferred overall geometry of the preferred embodiment of the cable is generally cylindrical, although other geometries are possible (e.g. stripline, microstrip, coplanar or slotline geometries).

Abstract translation: 电互连提供了低温或低温冷却电路与环境温度之间的路径。 作为系统，可冷冻（10）与槽线接触或过渡（20）组合。 在优选实施例中，可冷冻（10）包括邻近绝缘体（12）设置的导体（11），所述导体（11）又邻近另一个导体（13）设置。 这些部件的大小可以平衡通过可冷冻（10）的热负荷与插入损耗。 在最优选的实施例中，同轴可冷冻（10）具有由外部导体（13）围绕的电介质（12）（例如Teflon TM）围绕的中心导体（11），外导体（13）的厚度为约6至20 微米。 热负荷优选小于1瓦特，最优选小于瓦特的十分之一，插入损耗小于1分贝。 在本发明的另一方面，提供了一种槽线接触或过渡（20），其中中心导体（11）被电介质（12）部分地包围以形成相对平坦的部分（28）。 电缆的优选实施例的优选整体几何形状通常为圆柱形，尽管其他几何形状是可能的（例如，带状线，微带，共面或槽线几何形状）。

公开(公告)号：WO1993008319A1

公开(公告)日：1993-04-29

申请号：PCT/US1992009062

申请日：1992-10-22

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  EDDY, Michael, Martin

IPC: C30B23/06

CPC classification number: C30B29/225 ,  C23C14/087 ,  C23C14/541 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5866 ,  C30B11/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/22 ,  C30B33/00 ,  H01L39/143 ,  H01L39/2422 ,  H01L39/2448 ,  H01L39/2451 ,  H01P1/203 ,  Y02T50/67 ,  Y10S505/729 ,  Y10S505/783 ,  Y10S505/786

Abstract: Methods and reactors are described for the production of high temperature superconductor films on a variety of substrates, particularly those films which include volatile components during their manufacture. The reactors are particularly useful for producing films containing thallium. The reactors parts (10, 12, 14, 16) provide for relatively low volume cavities in which the substrate (22) is disposed, and control of the thallium oxide overpressure during the processing. In a preferred embodiment, one or more holes or apertures are made in the reactor to permit thallium and thallium oxide to controllably leak from the reactor. For manufacture of double sided superconducting films, a reactor is used having top (14) and bottom (10) plates each with one or more holes in them (18, 20). Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.

Abstract translation: 描述了用于在各种基底上生产高温超导体膜的方法和反应器，特别是在制造过程中包括挥发性组分的那些膜。 反应器特别适用于生产含铊的薄膜。 反应器部分（10,12,14,16）提供了相对较小的体积的空腔，其中衬底（22）被设置在其中，并且在处理期间控制氧化铊过压。 在优选的实施方案中，在反应器中制备一个或多个孔或孔，以允许铊和氧化铊从反应器中可控地泄漏。 为了制造双面超导膜，使用具有顶部（14）和底部（10）板的反应器，每个板在其中具有一个或多个孔（18,20）。 获得均匀的高温超导膜，同时在加工过程中抑制衬底和超导膜之间的反应。

公开(公告)号：WO1992020092A1

公开(公告)日：1992-11-12

申请号：PCT/US1992003832

申请日：1992-05-08

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  OLSON, William, Levin ,  ZUCK, Betty, Florence

IPC: H01L39/22

CPC classification number: H01L39/247

Abstract: A coating for high temperature superconducting devices consists of polyimide. In the preferred embodiment, the polyimide Probamide 412 is utilized to provide a passivation coating for thallium containing or YBCO superconductors. A substantially planar local structure is formed which may be utilized as the base for further structures, such as metallizations. A method for providing polyimide passivation coating on superconductors comprises generally the steps of coating the superconductor with the polyimide, optionally patterning the polyimide with photolithographic techniques, and curing the polyimide by a baking step.

Abstract translation: 用于高温超导器件的涂层由聚酰亚胺组成。 在优选的实施方案中，聚酰亚胺Probamide 412用于提供含铊或YBCO超导体的钝化涂层。 形成基本平坦的局部结构，其可以用作诸如金属化之类的其它结构的基底。 在超导体上提供聚酰亚胺钝化涂层的方法通常包括用聚酰亚胺涂覆超导体的步骤，可选地使用光刻技术对聚酰亚胺进行图案化，并通过烘烤步骤固化聚酰亚胺。

公开(公告)号：WO1994023470A1

公开(公告)日：1994-10-13

申请号：PCT/US1994003113

申请日：1994-03-23

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  FENZI, Neal, O. ,  LONG, Stephen, I.

IPC: H01Q01/26

CPC classification number: H01Q1/364 ,  H01Q1/26 ,  H01Q23/00

Abstract: A detector for electromagnetic radiation includes a high Q, low loss antenna (56, 58) and a low noise amplifier (66) requiring a high input impedance. In the preferred embodiment, the antenna comprises a low resistance (58), superconductive coil (56). The antenna forms a resonant circuit with a low loss capacitor (64), optionally a capacitor including superconductors. The output of the resonant circuit is provided as input to the semiconductor amplifier. In the preferred embodiment, junction FETs, preferably arranged in a cascode pair, are included in the semiconductor amplifier. In one aspect of the invention, feedback is provided from the output of the amplifier to its input. Effective loading of the antenna results, lowering the Q of the antenna, and broadening the bandwidth of the detector. Optimum matching of the antenna to the noise factor of the amplifier is achieved.

Abstract translation: 用于电磁辐射的检测器包括需要高输入阻抗的高Q低损耗天线（56,58）和低噪声放大器（66）。 在优选实施例中，天线包括低电阻（58），超导线圈（56）。 天线形成具有低损耗电容器（64）的谐振电路，可选地，包括超导体的电容器。 谐振电路的输出作为输入提供给半导体放大器。 在优选实施例中，优选地以共源共栅对布置的结FET被包括在半导体放大器中。 在本发明的一个方面，从放大器的输出到其输入端提供反馈。 天线的有效载荷会降低天线的Q值，并增加探测器的带宽。 实现了天线与放大器噪声系数的最佳匹配。

公开(公告)号：WO1994005022A1

公开(公告)日：1994-03-03

申请号：PCT/US1993007701

申请日：1993-08-16

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  BOURNE, Lincoln, C.

IPC: H01G01/01

CPC classification number: H01G4/008 ,  G01R33/34007 ,  G01R33/34023 ,  G01R33/34053 ,  G01R33/341 ,  G01R33/3642 ,  G01R33/3671 ,  H01F6/06 ,  H01P1/203 ,  H01P7/08 ,  H01P7/088 ,  H01Q1/364 ,  H03K17/78 ,  H03K17/92 ,  H03K2217/0036

Abstract: Control elements for RF antennas including high temperature superconducting capacitors (24) are formed. In one embodiment, a high temperature superconducting capacitor (24) is coupled to an inductor (22) to form a resonant circuit (20). In another embodiment a high temperature superconducting capacitor (32) is used to make a low-resistance cross-over (33) for an inductor (31). Additional circuits include circuits which do not use non-superconducting materials in the circuit, circuits which have coupled superconducting inductors (50, 51) for low-loss signal coupling, tuning and bandwidth broadening, and circuits which include switches to shut off the superconductivity of a superconductive element including low-loss photoconducting (70) and superconducting thermal (61) switches. These circuits are useful in Magnetic Resonance Imaging devices.

Abstract translation: 形成包括高温超导电容器（24）的RF天线的控制元件。 在一个实施例中，高温超导电容器（24）耦合到电感器（22）以形成谐振电路（20）。 在另一个实施例中，高温超导电容器（32）用于对电感器（31）进行低电阻交叉（33）。 附加电路包括在电路中不使用非超导材料的电路，具有用于低损耗信号耦合，调谐和带宽拓宽的耦合超导电感器（50,51）的电路以及包括用于切断超导电感 包括低损耗光导（70）和超导热（61）开关的超导元件。 这些电路在磁共振成像装置中是有用的。

公开(公告)号：WO1992020108A1

公开(公告)日：1992-11-12

申请号：PCT/US1992004032

申请日：1992-05-08

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  JAMES, Timothy, Walton ,  FORSE, Roger, James

IPC: H01L39/22

CPC classification number: H01L23/49888 ,  H01L2224/16

Abstract: A multichip interconnect module utilizes superconducting conductors to provide improved speed and reduced power dissipation. In one embodiment, x-direction and y-direction conductor units each comprise a substrate (30, 32) having alternating superconducting conductors (20) and ground plane lines (22), where the ground plane lines (22) are connected by bridge-like interconnects (24), where the x-direction and y-direction conductor units are selectively electrically connected. In another embodiment, a superconducting microstrip arrangement utilizes two or more structures having a substrate (30, 32), ground plane (20), insulator (46) and superconducting conductor stacked structure (22). Selective electrical interconnects (34) are made between the structures.

Abstract translation: 多芯片互连模块利用超导导体提供改进的速度并降低功耗。 在一个实施例中，x方向和y方向导体单元各自包括具有交替的超导导体（20）和接地平面线（22）的衬底（30,32），其中接地平面线（22） （24），其中x方向和y方向的导体单元选择性地电连接。 在另一个实施例中，超导微带布置利用具有衬底（30,32），接地平面（20），绝缘体（46）和超导导体堆叠结构（22）的两个或多个结构。 在结构之间形成选择性电互连（34）。

公开(公告)号：WO1998018139A1

公开(公告)日：1998-04-30

申请号：PCT/US1997018666

申请日：1997-10-16

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  RAO, Muralidhar, R.

IPC: H01B12/00

CPC classification number: H01L39/2422 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/741 ,  Y10S505/742

Abstract: A high temperature superconductor (HTS) tri-layer structure (20) and a method for providing the same are described. Preferably two dimensional growth for all layers is provided resulting in smooth surfaces and highly crystalline layers. Full oxygenation of HTS under-layer(s) (24) is provided despite having thick intervening dielectric mid-layer (26). HTS over- and under-layers (28, 24) are preferably structurally and electrically similar and have high crystallinity, the HTS layers have high Tc (e.g. > 90 K) comparable to Tc of single layer superconductor layers and a high Jc (e.g. > 1,000,000 A/(cm x cm)), the tri-layer properties do not significantly degrade as the thickness of the layers is increased, and the dielectric mid-layer (26) has high resistivity and is substantially pin-hole free. The HTS tri-layer structure (20) of the present invention is achieved by using a capping-layer (25) to protect the HTS under-layer (24), by conducting an oxygen anneal to fully oxygenate the HTS layers, and/or by thermally matching the substrate (22) to the other layers (e.g. by using buffer layers (23) to overcome lattice mismatch problems). The present invention also provides an improved HTS capacitor having low loss at microwave frequencies and having a smaller size and/or greater capacitance per area unit when compared to conventional HTS capacitors.

Abstract translation: 描述了高温超导体（HTS）三层结构（20）及其提供方法。 优选地，提供所有层的二维生长，得到光滑表面和高度结晶的层。 提供了HTS底层（24）的全氧合，尽管具有厚的中间介电中间层（26）。 HTS层和底层（28,24）优选在结构和电学上相似并且具有高结晶度，HTS层具有与单层超导体层的Tc相当的高Tc（例如> 90K）和高Jc（例如> 1,000,000A /（cm×cm）），三层性能随着层的厚度增加而不显着降低，并且电介质中间层（26）具有高电阻率并且基本上无针孔。 本发明的HTS三层结构（20）通过使用覆盖层（25）来保护HTS底层（24），通过进行氧退火以使HTS层完全充氧，和/或 通过将衬底（22）与其它层热匹配（例如通过使用缓冲层（23）来克服晶格失配问题）。 本发明还提供了一种改进的HTS电容器，其在微波频率下具有低损耗，并且与常规HTS电容器相比具有比每单位面积小的尺寸和/或更大的电容。

公开(公告)号：WO1996026555A1

公开(公告)日：1996-08-29

申请号：PCT/US1996001780

申请日：1996-02-07

Applicant: SUPERCONDUCTOR TECHNOLOGIES, INC.

Inventor： SUPERCONDUCTOR TECHNOLOGIES, INC. ,  MATTHAEI, George, L. ,  SCALAPINO, Douglas, J. ,  HEY-SHIPTON, Gregory, L.

IPC: H01P03/08

CPC classification number: H01P3/085 ,  H01P3/081

Abstract: In a stripline transmission system (fig. 1), a center conductor (12) having edges (14) is disposed between generally planar, substantially parallel ground planes (16, 18). A first dielectric (22) supports the center conductor (12) which is disposed between the first and second ground planes (16, 18). Gap portions (20) are formed adjacent the center conductor edges (14), the gap (20) containing a dielectric having a dielectric constant lower than that of the solid dielectric (22). The dielectric in the gap (20) is preferably air or vacuum. In one embodiment (fig. 2), the gap portion (42) extends in the region laterally exterior to the center conductor edges (32) and between the ground planes (34, 36). In a microstrip embodiment (50 in fig. 3), a substrate (52) has substantially parallel first and second faces (54, 56), the first face (54) bearing a center conductor (58) having edges (64) with adjacent troughs (62) formed into the first face (54), and a ground plane (60) on the second face (56). Reduced losses and improved linearity results, thereby providing applications for components such as filters, receivers and transmitters.

Abstract translation: 在带状线传输系统（图1）中，具有边缘（14）的中心导体（12）设置在大致平面的基本上平行的接地平面（16,18）之间。 第一电介质（22）支撑设置在第一和第二接地平面（16,18）之间的中心导体（12）。 间隙部分（20）邻近中心导体边缘（14）形成，间隙（20）包含介电常数低于固体电介质（22）介电常数的电介质。 间隙（20）中的电介质优选为空气或真空。 在一个实施例（图2）中，间隙部分（42）在中心导体边缘（32）的横向外部和接地平面（34,36）之间的区域中延伸。 在微带实施例（图3中的50）中，衬底（52）具有基本上平行的第一和第二面（54,56），第一面（54）承载具有边缘（64）的中心导体（58） 形成第一面（54）的槽（62）和第二面（56）上的接地平面（60）。 降低损耗和提高线性度，从而为滤波器，接收器和发射器等组件提供应用。