公开(公告)号：GB2521417A

公开(公告)日：2015-06-24

申请号：GB201322497

申请日：2013-12-19

Applicant: SWISSLITHO AG ,  IBM

Inventor： DUERIG URS T ,  FRINGES STEFAN ,  KNOLL ARMIN W ,  HOLZNER FELIX

IPC: G03F7/20

Abstract: For large area standard precision patterning a thermo optical lithographic system 3 is used. For small area higher precision nanoscale patterning a thermal scanning probe lithographic system 7 comprising a heated raster scanning probe tip 34 is used. In this manner a thermally sensitive photoresist can be efficiently patterned with composite large area low resolution and small area high resolution patterns.