公开(公告)号：JPH08181283A

公开(公告)日：1996-07-12

申请号：JP14428495

申请日：1995-06-12

Applicant: SYMBIOS LOGIC INC

Inventor： HOON NIYUEN ,  JIYON DEII UOOKAA

IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L27/02

Abstract: PURPOSE: To obtain an integrated circuit device incorporating a thick field device improved as a protective mechanism against electrostatic discharge(ESD). CONSTITUTION: A thick field device comprises two PN junctions (P region 25 and N+ regions 21, 23) isolated by field oxide 27 and functions as a lateral bipolar transistor having a floating base. A dopant is then implanted, at a controlled concentration, under the field oxide 27 in order to lower the trigger voltage. A well extends beneath metal contacts 31, 33 to minimize the effect of junction spiking. The metal contacts 31, 33 extending while covering the field oxide 27 provide a barrier to migration of ion, otherwise reduce the leak current.

公开(公告)号：JPH0855965A

公开(公告)日：1996-02-27

申请号：JP14428395

申请日：1995-06-12

Applicant: SYMBIOS LOGIC INC

Inventor： HOON NIYUEN ,  JIYON DEII UOOKAA

IPC: H01L27/04 ,  H01L21/822 ,  H01L23/62 ,  H01L27/02 ,  H01L29/78

Abstract: PURPOSE: To provide an ESD protection system operable for a mixed voltage circuit. CONSTITUTION: An ESD protection system is provided for supplying an ESD conduction paths between different power lines while effectively utilizing several different types of over-voltage protection devices. For example, shunt diodes 28 and 30 can be used between the ground lines of the different power supplies and between I/O pads and power supply lines, an SCR protecting mechanism 32 can be used between I/O pads and ground, and thick type field device protecting mechanisms 80, 82, 84, 86 and 88 can be used between different power supply VDD lines.