公开(公告)号：US20240224761A1

公开(公告)日：2024-07-04

申请号：US18376088

申请日：2023-10-03

Applicant: Samsung Display Co., LTD.

Inventor： Joon Yong PARK ,  Hyun Eok SHIN ,  Ju Hyun LEE ,  Yung Bin CHUNG

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/122

CPC classification number: H10K59/8791 ,  H10K59/1201 ,  H10K59/122

Abstract: A display device includes a first pixel electrode disposed in a first emission area on a substrate, an insulating layer covering an edge of the first pixel electrode, a first emissive layer disposed on the first pixel electrode and the insulating layer, a first common electrode disposed on the first emissive layer, a bank disposed on the insulating layer to surround the first emission area, a low-reflection insulating layer disposed on the bank, a first organic pattern surrounding the first emission area on the low-reflection insulating layer and including a same material as a material of the first emissive layer. The bank includes a first bank disposed on the insulating layer and contacts the first common electrode, a second bank disposed on the first bank, a third bank disposed on the second bank, and a fourth bank disposed on the third bank. The first to fourth banks include metal materials.

公开(公告)号：US20240057410A1

公开(公告)日：2024-02-15

申请号：US18131535

申请日：2023-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Eok SHIN ,  Joon Yong PARK ,  Joon Woo BAE ,  Do Keun SONG ,  Yung Bin CHUNG

IPC: H10K59/131 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K59/1201

Abstract: A display device includes a substrate including a flat area and a trench area, which is recessed from the flat area; an electrode pattern disposed on the substrate, where the electrode pattern includes a dent portion, which is bent along a profile of the trench area of the substrate; a planarization layer inserted in the dent portion; a first insulating layer covering the substrate, the electrode pattern, and the planarization layer; and a light-emitting element disposed on the first insulating layer, where the planarization layer includes an organic-inorganic composite material.

公开(公告)号：US20160204125A1

公开(公告)日：2016-07-14

申请号：US14799995

申请日：2015-07-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin CHUNG ,  Chul-Hyun BAEK ,  Eun Jeong CHO ,  Jung Yun JO

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L21/0217 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/78669 ,  H01L29/78678

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Abstract translation: 薄膜晶体管阵列面板包括绝缘基板，设置在绝缘基板上的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线，以及 包括源电极，设置在半导体层上并面对源电极的漏电极，设置在栅绝缘层上的第一电极，设置在第一电极上并包括氮化硅的第一钝化层，设置在第一电极上的第二钝化层 第一钝化并且包括氮化硅，以及设置在钝化层上的第二电极，其中第一钝化层中氮 - 氢键与硅 - 氢键的第一比例不同于氮 - 氢键与硅的第二比率 在第二钝化层中的氢键。

公开(公告)号：US20250056970A1

公开(公告)日：2025-02-13

申请号：US18599386

申请日：2024-03-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Eok SHIN ,  Su Kyoung YANG ,  Dong Min LEE ,  Joon Yong PARK ,  Byung Soo SO ,  Yung Bin CHUNG

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

Abstract: A display device includes a pixel electrode in a light emission area, a pixel defining layer which is on the pixel electrode and defines the light emission area, a light emitting layer and a common electrode on the pixel electrode, a bank on the pixel defining layer, the bank including a first bank layer defining a lower portion of a bank opening corresponding to the light emission area and a second bank layer which defines an upper portion of the bank opening and a tip of the bank, the tip including upper and lower surfaces of the second bank layer, a lower inorganic encapsulation layer which is on the bank and includes an inorganic pattern on the common electrode and facing and spaced apart from both the upper and lower surfaces of the tip, and an auxiliary pattern between the lower surface of the tip and the inorganic pattern.

公开(公告)号：US20210050536A1

公开(公告)日：2021-02-18

申请号：US16906866

申请日：2020-06-19

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

公开(公告)号：US20170110481A1

公开(公告)日：2017-04-20

申请号：US15130654

申请日：2016-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin CHUNG ,  Bo Geon JEON ,  Eun Jeong CHO ,  Tae Young AHN ,  Woo Seok JEON ,  Sung Hoon YANG

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/786 ,  H01L21/4763 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/465 ,  G02F1/1368 ,  H01L29/45

CPC classification number: H01L27/1222 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1262 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/78606

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

公开(公告)号：US20160322602A1

公开(公告)日：2016-11-03

申请号：US15045688

申请日：2016-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho JUNG ,  Chaun Gi CHOI ,  Hye Young PARK ,  Eun Young LEE ,  Joo Hee JEON ,  Eun Jeong CHO ,  Bo Geon JEON ,  Yung Bin CHUNG

IPC: H01L51/52 ,  H01L51/00

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7849 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2251/5338 ,  H01L2251/55 ,  Y02E10/549

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract translation: 薄膜晶体管阵列面板装置包括：基底; 阻挡层，设置在所述基底基板上并且包括多个透明材料层; 以及设置在阻挡层上的薄膜晶体管阵列。 阻挡层的折射率与基底的折射率之差可以在约6％以内。 透明材料层可以布置成使得具有压缩残余应力的透明材料层和具有拉伸残余应力的透明材料层交替堆叠。 每个透明材料层可以包括氮氧化硅（SiON）。

公开(公告)号：US20250143091A1

公开(公告)日：2025-05-01

申请号：US18758082

申请日：2024-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE ,  Yung Bin CHUNG ,  Yu Gwang JEONG

IPC: H10K59/122

Abstract: A display device includes a first separation layer disposed in an emission area of a substrate, a second separation layer disposed on the first separation layer, an insulating layer disposed on the second layer, a first electrode disposed on the insulating layer, a light emitting structure disposed on the first electrode, and a second electrode disposed on the light emitting structure. The first electrode includes a first area on the second layer and a second area electrically separated from the first area.

公开(公告)号：US20240292667A1

公开(公告)日：2024-08-29

申请号：US18519369

申请日：2023-11-27

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Eok SHIN ,  Dong Min LEE ,  Woo-Seok JEON ,  Yung Bin CHUNG ,  Yu-Gwang JEONG

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/80522

Abstract: A display device includes a plurality of transistors disposed on a substrate, an insulating layer disposed on the transistors, a first electrode disposed on the insulating layer and electrically connected to the transistors, a partition wall disposed on the insulating layer, a common layer disposed on the partition wall and the first electrode, an emission layer disposed on the common layer, a second electrode disposed on the emission layer, and an auxiliary layer disposed on the second electrode. The partition wall includes a groove, and an inner width of the groove is greater than an inlet width of the groove.

公开(公告)号：US20220278288A1

公开(公告)日：2022-09-01

申请号：US17744543

申请日：2022-05-13

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.