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公开(公告)号:US20250160116A1
公开(公告)日:2025-05-15
申请号:US19027593
申请日:2025-01-17
Applicant: Samsung Display Co., Ltd.
Inventor: Wonho JANG , Sun PARK , Donghyun WON
IPC: H10K50/844 , H10K59/122
Abstract: A display apparatus includes a substrate including a display area and a peripheral area, a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, a first inorganic insulating layer located on the substrate and under the gate electrode and covering the semiconductor layer, a second inorganic insulating layer located on the first inorganic insulating layer and covering the gate electrode, a third inorganic insulating layer located on the second inorganic insulating layer and including a 1-3th opening in the peripheral area, an organic insulating layer located on the third inorganic insulating layer, covering the source electrode and the drain electrode, and including a second opening overlapping the 1-3th opening in the peripheral area, and a pattern portion located on a layer under the organic insulating layer and overlapping the 1-3th opening and the second opening.
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公开(公告)号:US20230123185A1
公开(公告)日:2023-04-20
申请号:US17878449
申请日:2022-08-01
Applicant: Samsung Display Co., Ltd.
Inventor: Hyun KIM , Seulki KIM , Kapsoo YOON , Woogeun LEE , Seungha CHOI , Yeeun KANG , Shoyeon KIM , Seungrae KIM , Donghyun WON , Kwangsoo LEE
Abstract: A display apparatus includes a semiconductor layer arranged on a substrate and including a channel area and a source area and a drain area respectively arranged at both sides of the channel area, the semiconductor layer including an opening portion arranged to be adjacent to one of the source area and the drain area, an electrode overlapping in a plan view and electrically connected to one of the source area and the drain area, and an insulating pattern arranged between the semiconductor layer and the electrode, wherein a first edge of the electrode adjacent to the opening portion is spaced apart from the opening portion, and an edge portion of the insulating pattern adjacent to the opening portion is spaced apart from the opening portion.
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