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公开(公告)号：US12035585B2
公开(公告)日：2024-07-09
申请号：US17298616
申请日：2019-05-08
Applicant: Samsung Display Co., Ltd.
Inventor： Juwon Yoon , Sanghee Jang , Kibum Kim , Taehoon Yang , Jeonghyun Lee , Jongchan Lee , Pilsuk Lee , Woonghee Jeong
IPC: H10K59/131
CPC classification number: H10K59/131
Abstract: An embodiment of the present disclosure comprises a display device including a substrate including a display area and a peripheral area around the display area, a thin-film transistor on the substrate in the display area and a display element electrically connected to the thin-film transistor, and a first voltage line and a second voltage line located on the substrate in the peripheral area and supplying power for driving the display element, wherein the first voltage line is a common voltage line and entirely surrounds the display area, the second voltage line is a driving voltage line and is arranged to correspond to one side of the display area, and the first voltage line and the second voltage line are on different layers.
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公开(公告)号：US11108006B2
公开(公告)日：2021-08-31
申请号：US16220033
申请日：2018-12-14
Applicant: Samsung Display Co., Ltd.
Inventor： Jintaek Kim , Kiwan Ahn , Jinwoo Lee , Donghyun Kim , Pilsuk Lee
Abstract: A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs.
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公开(公告)号：US20170025637A1
公开(公告)日：2017-01-26
申请号：US15150246
申请日：2016-05-09
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Taewoong Kim , Younggug Seol , Boik Park , Taean Seo , Minsu Lee , Sunhee Lee , Pilsuk Lee , Jinhwan Choi
CPC classification number: H01L51/5253 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323
Abstract: A display apparatus capable of preventing (or protecting from) permeation of moisture. The apparatus includes a substrate comprising a display area and a peripheral area surrounding the display area; a pad unit located on the peripheral area; an organic insulating layer covering the display area and a part of the peripheral area adjacent to the display area; and an inorganic insulating layer that covers at least a first area when the first area is a part between the organic insulating layer and the pad unit.
Abstract translation: 能够防止（或防止）水分渗透的显示装置。 该装置包括：基板，包括显示区域和围绕显示区域的外围区域; 位于周边区域上的垫单元; 覆盖所述显示区域和与所述显示区域相邻的所述周边区域的一部分的有机绝缘层; 以及当所述第一区域是所述有机绝缘层和所述垫单元之间的部分时，至少覆盖第一区域的无机绝缘层。
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公开(公告)号：US12302708B2
公开(公告)日：2025-05-13
申请号：US18443199
申请日：2024-02-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jin Woo Lee , Jintaek Kim , Yeonhong Kim , Pilsuk Lee
IPC: H10K59/12 , H10K59/121 , H10K59/124 , H10K77/10
Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.
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公开(公告)号：US20240349558A1
公开(公告)日：2024-10-17
申请号：US18755675
申请日：2024-06-27
Applicant: Samsung Display Co., Ltd.
Inventor： Juwon Yoon , Sanghee Jang , Kibum Kim , Taehoon Yang , Jeonghyun Lee , Jongchan Lee , Pilsuk Lee , Woonghee Jeong
IPC: H10K59/131
CPC classification number: H10K59/131
Abstract: An embodiment of the present disclosure comprises a display device including a substrate including a display area and a peripheral area around the display area, a thin-film transistor on the substrate in the display area and a display element electrically connected to the thin-film transistor, and a first voltage line and a second voltage line located on the substrate in the peripheral area and supplying power for driving the display element, wherein the first voltage line is a common voltage line and entirely surrounds the display area, the second voltage line is a driving voltage line and is arranged to correspond to one side of the display area, and the first voltage line and the second voltage line are on different layers.
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Patent Agency Ranking
公开(公告)号：US11316133B2
公开(公告)日：2022-04-26
申请号：US16903297
申请日：2020-06-16
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jinhwan Choi , Taewoong Kim , Taean Seo , Younggug Seol , Pilsuk Lee
Abstract: An organic light-emitting display apparatus includes a substrate, an inorganic insulation film on the substrate, an organic insulation film on the inorganic insulation film, an organic light-emitting device on the organic insulation film, and an encapsulation unit including a first inorganic film covering the organic light-emitting device and having a first boundary portion contacting the organic insulation film, an organic film covering the first inorganic film and having a second boundary portion contacting the inorganic insulation film, and a second inorganic film covering the organic film and having a third boundary portion contacting the substrate.
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公开(公告)号：US20200313118A1
公开(公告)日：2020-10-01
申请号：US16903297
申请日：2020-06-16
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jinhwan Choi , Taewoong Kim , Taean Seo , Younggug Seol , Pilsuk Lee
Abstract: An organic light-emitting display apparatus includes a substrate, an inorganic insulation film on the substrate, an organic insulation film on the inorganic insulation film, an organic light-emitting device on the organic insulation film, and an encapsulation unit including a first inorganic film covering the organic light-emitting device and having a first boundary portion contacting the organic insulation film, an organic film covering the first inorganic film and having a second boundary portion contacting the inorganic insulation film, and a second inorganic film covering the organic film and having a third boundary portion contacting the substrate.
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公开(公告)号：US20190198594A1
公开(公告)日：2019-06-27
申请号：US16228846
申请日：2018-12-21
Applicant: Samsung Display Co., Ltd.
Inventor： Pilsuk Lee , Jintaek Kim , Kiwan Ahn
CPC classification number: H01L27/3262 , H01L21/02532 , H01L21/02592 , H01L21/02678 , H01L27/1222 , H01L27/1274 , H01L27/1288 , H01L29/66757 , H01L29/78609 , H01L29/78675 , H01L51/0097 , H01L2227/323 , H01L2251/5338
Abstract: A method of manufacturing a display apparatus includes: crystallizing portions of an amorphous silicon layer to form a preliminary semiconductor layer defining a channel region of a thin film transistor (“TFT”), a preliminary source and drain region disposed at opposing sides of the channel region, respectively, and an amorphous silicon layer region of the TFT, disposed between the channel region and the preliminary source or drain region; forming a source and drain region of the TFT at the opposing sides of the channel region, respectively, by doping the preliminary source and drain regions; and forming a source and drain electrode of the TFT respectively connected to the source and drain regions, where the semiconductor layer includes the amorphous silicon layer region connecting the channel region to at least one of the source and drain regions, and forming a display device connected to the TFT including the amorphous silicon layer region.
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公开(公告)号：US10163991B2
公开(公告)日：2018-12-25
申请号：US15722902
申请日：2017-10-02
Applicant: Samsung Display Co., Ltd.
Inventor： Younggug Seol , Juchan Park , Sunhee Lee , Pilsuk Lee
Abstract: A display device includes a substrate comprising a first plastic layer, a second plastic layer on the first plastic layer, and an inorganic layer between the first plastic layer and the second plastic layer, an inorganic embossed layer on the substrate and comprising a plurality of mountain parts, an organic layer on the inorganic embossed layer, an inorganic buffer layer on the organic layer, a thin film transistor on the inorganic buffer layer, and a display element electrically connected to the thin film transistor.
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公开(公告)号：US12136373B2
公开(公告)日：2024-11-05
申请号：US18119502
申请日：2023-03-09
Applicant: Samsung Display Co., LTD.
Inventor： Sunho Kim , Yoomin Ko , Juchan Park , Pilsuk Lee
IPC: G09G3/20
Abstract: A pixel circuit includes a first transistor, a second transistor including a control electrode receiving a write gate signal generated based on clock signals having a duration of M horizontal time, M being a positive integer greater than or equal to 2, a first electrode receiving a data voltage, and a second electrode electrically connected to the first transistor, a third transistor including a control electrode receiving a compensation gate signal generated based on a first next write gate signal applied after the write gate signal is applied, a first and second electrodes electrically connected to the first transistor, and a fourth transistor including a control electrode receiving an initialization gate signal generated based on a previous write gate signal applied before the write gate signal is applied, a first electrode receiving a first initialization voltage, and a second electrode electrically connected to the first transistor.
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