公开(公告)号：US20130193002A1

公开(公告)日：2013-08-01

申请号：US13747782

申请日：2013-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee Yeon KIM ,  Daeun KIM ,  Young Chul KO ,  Hyun Suk KWAK

IPC: C02F1/461 ,  C02F1/467

CPC classification number: C02F1/4618 ,  C02F1/283 ,  C02F1/441 ,  C02F1/4674 ,  C02F1/4676 ,  C02F2001/4619 ,  C02F2209/02 ,  C02F2209/04 ,  C02F2209/06

Abstract: An apparatus for producing electrolytic reduced water capable of improving the sterilization performance and a control method thereof, the apparatus including an electrolytic cell configured to produce electrolytic reduced water by electrolyzing purified water that is penetrated through a reverse osmosis filter of a water purifying unit, a water storage tank configured to store the electrolytic reduced water, a sterilization electrolytic cell configured to produce sterilization water by electrolyzing reverse osmosis waste water that is discharged from the water purifying unit, and a control unit configured to perform a control operation to sterilize at least one of the water storage tank, a cork connected to the water storage tank, and a pipe that connect the water storage tank to the electrolytic cell by use of the sterilization water.

Abstract translation: 一种能够提高灭菌性能的电解还原水的制造装置及其控制方法，其特征在于，包括：电解槽，其通过电解通过水净化单元的反渗透过滤器的净化水， 配置为存储电解还原水的储水箱，通过电解从净水单元排出的反渗透废水来生成灭菌水的杀菌电解池，以及控制单元，其被配置为执行控制操作以对至少一个 的蓄水箱，与储水箱连接的软木塞，以及通过使用灭菌水将储水箱与电解池连接的管道。

公开(公告)号：US20250154648A1

公开(公告)日：2025-05-15

申请号：US18791776

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo KIM ,  Daeun KIM ,  Akio SAITO ,  Tomoharu YOSHINO ,  Kazuki HARANO ,  Takashi HIGASHINO ,  Shotaro TAGUCHI ,  Yoshiki MANABE ,  Yu Jin PARK ,  Byung Seok LEE ,  Seung-min RYU ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: C23C16/34 ,  C07F17/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.

公开(公告)号：US20210254884A1

公开(公告)日：2021-08-19

申请号：US17172502

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwoo HONG ,  Daeun KIM ,  Youngju JEONG

IPC: F25D23/02 ,  F25D29/00

Abstract: A refrigerator for recognizing an object to be stored and automatically opening a door based on the recognized object, and a method therefor are provided. The refrigerator includes a main body, at least one door provided on a front surface of the main body, one or more storage rooms provided in the main body or the at least one door and configured to store an object, a cooler configured to cool the one or more storage rooms, a door driver configured to generate power for automatically opening and closing the at least one door, a camera configured to photograph an image of surroundings around the at least one door, and at least one processor configured to, in the case in which an object is recognized from the image of surroundings photographed by the camera, transmit a control signal for opening the at least one door to the door driver based on the recognized object.

公开(公告)号：US20240339395A1

公开(公告)日：2024-10-10

申请号：US18494183

申请日：2023-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungchul KANG ,  Rakhwan KIM ,  Jeongik KIM ,  Chunghwan SHIN ,  Daeun KIM ,  Seongdong LIM

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/532 ,  H01L27/092

CPC classification number: H01L23/5226 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate contact structure electrically connected to the outer electrode. The gate contact structure may include a lower gate contact on a top surface of the outer electrode and an upper gate contact on the lower gate contact. The lower gate contact may include a first liner pattern, a first filling pattern on the first liner pattern, and a nucleation pattern between the first liner pattern and the first filling pattern. The upper gate contact may not include the nucleation pattern.