公开(公告)号：EP4120375A3

公开(公告)日：2023-05-03

申请号：EP22167361.9

申请日：2022-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  LEE, Seungjae ,  HASE, Naoki

IPC: H10N50/10 ,  H10N50/85 ,  H01F10/32 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device (100a) having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer (103) having a first surface and a second surface opposite the first surface; a pinned layer (101) facing the first surface of the free layer; a first oxide layer (102) between the pinned layer and the free layer; and a second oxide layer (104) on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZO x which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：EP4271164A3

公开(公告)日：2023-12-13

申请号：EP23189476.7

申请日：2022-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  KIM, Kiwoong ,  HASE, Naoki

IPC: H10N50/10 ,  H10N50/85 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：EP4271164A2

公开(公告)日：2023-11-01

申请号：EP23189476.7

申请日：2022-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  KIM, Kiwoong ,  HASE, Naoki

IPC: H10N50/10 ,  H10N50/85 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：EP4053925A2

公开(公告)日：2022-09-07

申请号：EP22153643.6

申请日：2022-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  HASE, Naoki ,  LEE, Seungjae

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/02

Abstract: Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic tunneling junction device (200) includes a first magnetic layer (201); a second magnetic layer (205) disposed to face the first magnetic layer; and a first oxide layer (202) disposed between the first magnetic layer and the second magnetic layer and including a metal oxide, wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and wherein the second magnetic layer includes a magnetic material doped with a metal element.

公开(公告)号：EP4250296A3

公开(公告)日：2023-12-20

申请号：EP23189475.9

申请日：2022-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  KIM, Kiwoong ,  HASE, Naoki

IPC: H10N50/10 ,  H10N50/85 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：EP4250296A2

公开(公告)日：2023-09-27

申请号：EP23189475.9

申请日：2022-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  KIM, Kiwoong ,  HASE, Naoki

IPC: G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：EP4053925A3

公开(公告)日：2023-04-19

申请号：EP22153643.6

申请日：2022-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  HASE, Naoki ,  LEE, Seungjae

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/02

Abstract: Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic tunneling junction device (200) includes a first magnetic layer (201); a second magnetic layer (205) disposed to face the first magnetic layer; and a first oxide layer (202) disposed between the first magnetic layer and the second magnetic layer and including a metal oxide, wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and wherein the second magnetic layer includes a magnetic material doped with a metal element.

公开(公告)号：EP4207201A1

公开(公告)日：2023-07-05

申请号：EP22184097.8

申请日：2022-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： RYU, Jeongchun ,  LEE, Seungjae ,  HASE, Naoki ,  KIM, Kwangseok

IPC: G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  H01L43/06

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：EP4120375A2

公开(公告)日：2023-01-18

申请号：EP22167361.9

申请日：2022-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Kwangseok ,  PARK, Seonggeon ,  LEE, Seungjae ,  HASE, Naoki

IPC: H01L43/08 ,  H01L43/10

Abstract: Provided are a magnetic tunneling junction device (100a) having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer (103) having a first surface and a second surface opposite the first surface; a pinned layer (101) facing the first surface of the free layer; a first oxide layer (102) between the pinned layer and the free layer; and a second oxide layer (104) on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZO x which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.