Abstract:
A non-volatile inverter may be configured to perform a memory function. The non-volatile inverter may include first and second transistors. The first transistor may include a first gate electrode, a first electrode, and a second electrode. The second transistor may include a second gate electrode and a third electrode and may share the second electrode with the first transistor. The first transistor may include a first switching layer and a charge trap layer. The first switching layer may be configured to switch between a high resistance state and a low resistance state. The charge trap layer may be configured to trap or de-trap charges according to the resistance state of the first switching layer. The first switching layer may include a P-N diode. The second transistor may include a second gate switching layer and a charge trap layer.
Abstract:
A film for writing may include: a rough layer, including a non-flat surface, configured to transmit a first light beam and a second light beam of different wavelength bands; and/or a photonic crystal layer, arranged on the rough layer, configured to transmit the first light beam and configured to reflect the second light beam. A film for writing, which transmits visible rays, may include: a non-flat layer. A difference between a maximum thickness and a minimum thickness of the non-flat layer may be from about 220 nanometers (nm) to about 2 microns (μm). A film for writing may include: a first layer; and/or a second layer on the first layer. The first layer may be configured to transmit first and second light beams of different frequency bands. The second layer may be configured to transmit the first light beam, but to reflect the second light beam.