公开(公告)号：US20240096879A1

公开(公告)日：2024-03-21

申请号：US18298678

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu Man HWANG ,  Sung Il PARK ,  Jin Chan YUN ,  Dong Kyu LEE

IPC: H01L27/088 ,  H01L21/822 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/088 ,  H01L21/8221 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/82345 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.