公开(公告)号：US20240327338A1

公开(公告)日：2024-10-03

申请号：US18483895

申请日：2023-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Aram JEON ,  Hana KIM ,  Beomseok KIM ,  Hoyoon PARK ,  Kyuhyun IM ,  Jinwon JEON ,  Sungwon CHOI

IPC: C07C309/58 ,  C07C309/42 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20

CPC classification number: C07C309/58 ,  C07C309/42 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/029 ,  G03F7/2004

Abstract: Provided are an organic salt represented by Formula 1, a resist composition including the same, and a method of forming a pattern by using the same:


A11+B11−  Formula 1



wherein, in Formula 1,
A11+ is represented by Formula 1A, and B11− is represented by Formula 1B,










wherein descriptions of R11 to R13, L21, L22, a21, a22, R21, R22, Rf, b22, c11 and n11 in Formulae 1A and 1B are provided herein.

公开(公告)号：US20250102906A1

公开(公告)日：2025-03-27

申请号：US18420038

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon JEON ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Changheon LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004 ,  C07F7/22

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

公开(公告)号：US20240319592A1

公开(公告)日：2024-09-26

申请号：US18491310

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0042 ,  G03F7/0048 ,  G03F7/0382

Abstract: Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.




For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.

公开(公告)号：US20250147419A1

公开(公告)日：2025-05-08

申请号：US18620240

申请日：2024-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha CHAE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Jiyoun LEE ,  Changheon LEE ,  Jinwon JEON

IPC: G03F7/027

Abstract: Provided are a resist composition and a pattern formation method using the same, the resist composition including a first organometallic compound represented by one of Formulae 1-1 to 1-4 and a second organometallic compound represented by Formula 2: wherein M11, M21, L11 to L14, L21 to L24, a11 to a14, a21 to a24, R11 to R14, R21 to R24, b11 to b14, b21 to b24, Y11 to Y13, and X11 to X13 in Formulae 1-1 to 1-4 and 2 are as described in the specification.

公开(公告)号：US20250147415A1

公开(公告)日：2025-05-08

申请号：US18635761

申请日：2024-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Jiyoun LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004

Abstract: Provided are a resist composition and a pattern formation method using the same. The resist composition may include an organometallic compound represented by one of Formulae 1-1 to 1-4, and an additive represented by Formula 2: wherein M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2 are described in the specification.