Abstract:
Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.
Abstract:
The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method of managing an electronic device is provided, which includes determining a management target device, selecting at least one measurement device based on the determined management target device, transmitting an operation command to the management target device, receiving measurement information from the at least one measurement device, and determining a state of the management target device based on the received measurement information.
Abstract:
Provided is a method and apparatus for providing call function continuity in an electronic device. The electronic device may include: a first communication circuit configured to support new radio (NR) communication and/or long-term evolution (LTE) communication, a second communication circuit configured to support wireless LAN communication, and at least one processor operatively connected to the first communication circuit and the second communication circuit, wherein the processor is configured to control the electronic device to: register with a network of the NR communication via the first communication circuit; connect a call to an external device using the wireless LAN communication based on being in a state of being registered with the network of the NR communication; based on the call connection to the external device using the wireless LAN communication, restrict use of the NR communication; and based on the restriction of the use of the NR communication, register with a network of the LTE communication via the first communication circuit.
Abstract:
Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having the electrode connecting structure. The electrode connecting structure may include an adhesion layer formed of a two-dimensional material provided between the graphene layer and the metal layer. The graphene layer may be a diffusion barrier, and the adhesion layer may stably maintain the interface characteristics of the graphene layer and the metal layer when the metal layer is formed on a surface of the graphene layer.
Abstract:
Provided are a complex of heterogeneous two-dimensional materials and a method of manufacturing the same. The complex of heterogeneous two-dimensional materials may include a substrate; a first two-dimensional material layer on the substrate and having a two-dimensional crystal structure; and a second two-dimensional material layer between the substrate and the first two-dimensional material layer. The second two-dimensional material layer have a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded to each other.
Abstract:
Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp 2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
Abstract:
A multilayer structure includes a first material layer (L10), a second material layer (L20), and a diffusion barrier layer (B10). The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.