公开(公告)号：US20230366853A1

公开(公告)日：2023-11-16

申请号：US18093037

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUNG YOON RYU ,  Donghyun LEE ,  SOOSEOK LEE ,  YOUNGHOON SOHN

IPC: G01N29/04 ,  H01L21/66 ,  G01N29/265 ,  G01N29/24

CPC classification number: G01N29/043 ,  H01L22/20 ,  G01N29/265 ,  G01N29/24 ,  G01N2291/0289

Abstract: A method of fabricating a semiconductor device may include disposing a first aperture on a surface of a substrate; positioning a first ultrasonic wave receiving probe on the surface of the substrate in the first aperture; disposing a second aperture on the surface of the substrate; positioning a second ultrasonic wave receiving probe on the surface of the substrate in the second aperture; transmitting an ultrasonic wave to the substrate; and receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate. The receiving of the reflection ultrasonic wave comprises one of: receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using the first ultrasonic wave receiving probe positioned on the surface of the substrate; and receiving the reflection ultrasonic wave, which is transmitted through the second aperture, using the second ultrasonic wave receiving probe positioned on the surface of the substrate. The first ultrasonic wave receiving probe and the second ultrasonic wave receiving probe are spaced apart from each other in a horizontal direction.