公开(公告)号：US20220268830A1

公开(公告)日：2022-08-25

申请号：US17495487

申请日：2021-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyoon An ,  Sangwoon Lee ,  Sungjin Kim ,  Seunghyun Kim ,  Wonki Roh ,  Chulwoo Park ,  Seongjae Byeon ,  Joohyun Jeon ,  Hyoeun Jung

IPC: G01R31/28 ,  G06F30/20 ,  G06N20/00 ,  G01T1/24

Abstract: A method for predicting a defect in a semiconductor device includes: calculating a first probability that particles will be generated in a semiconductor element by radiation; calculating a second probability that damage will occur in the semiconductor element due to the particles; generating a training data set using input data and simulation data, the input data including damage data generated using the first probability and the second probability and including at least one of a position in which the damage will occur and an amount of the damage, impurity concentration of impurities doped in at least a portion of the semiconductor element, and structural data of the semiconductor element, and the simulation data including electrical characteristics of the semiconductor element obtained as a result of a simulation based on the input data; and training a machine learning model based on the training data set to generate a defect prediction model.

公开(公告)号：US20250016992A1

公开(公告)日：2025-01-09

申请号：US18763801

申请日：2024-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juho Lee ,  Mintae Ryu ,  Youngseok Park ,  Seongjae Byeon ,  Younggeun Song

IPC: H10B12/00

Abstract: A semiconductor memory device includes a substrate, a conductive line disposed on the substrate, a horizontal channel portion extending in a first direction on the conductive line and partially covering the conductive line, a separation insulating layer disposed on the horizontal channel portion, a gate insulating layer including a first portion on the conductive line and a second portion that extends in a second direction that is perpendicular to the substrate, a vertical channel portion between the gate insulating layer and the separation insulating layer, the vertical channel portion extending in the second direction, and a spacer on the first portion of the gate insulating layer. A first material included in the horizontal channel portion is different from a second material included in the vertical channel portion.

公开(公告)号：US12182486B2

公开(公告)日：2024-12-31

申请号：US17491739

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoon Lee ,  Joohyun Jeon ,  Sungjin Kim ,  Seunghyun Kim ,  Wonki Roh ,  Chulwoo Park ,  Seongjae Byeon ,  Taeyoon An ,  Hyoeun Jung

IPC: G06F30/3308 ,  G06F30/25

Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

公开(公告)号：US20240397708A1

公开(公告)日：2024-11-28

申请号：US18402790

申请日：2024-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juho Lee ,  Seongjae Byeon ,  Wonsok Lee ,  Jeon IL Lee

IPC: H10B12/00

Abstract: A semiconductor memory device includes a bit line on a substrate and extending in a first direction parallel to a top surface of the substrate, a channel pattern connected to a top surface of the bit line and extending in a second direction perpendicular to the top surface of the substrate, a first drain pattern on the channel pattern, a first word line adjacent to a lower portion of the first drain pattern and the channel pattern, and a gate insulating layer between the lower portion of the first drain pattern and the first word line and between the channel pattern and the first word line. An energy band gap of a first material of the first drain pattern is greater than an energy band gap of a second material of the channel pattern.