公开(公告)号：US20220230912A1

公开(公告)日：2022-07-21

申请号：US17714546

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dowan KIM ,  Doohwan LEE ,  Seunghwan BAEK

IPC: H01L21/768 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor package may include forming a first substrate including a redistribution layer, providing a second substrate including a semiconductor chip and an interconnection layer on the first substrate to connect the semiconductor chip to the redistribution layer, forming a first encapsulation layer covering the second substrate, and forming a via structure penetrating the first encapsulation layer. The forming the via structure may include forming a first via hole in the first encapsulation layer, forming a photosensitive material layer in the first via hole, exposing and developing the photosensitive material layer in the first via hole to form a second encapsulation layer having a second via hole, and filling the second via hole with a conductive material. A surface roughness of a sidewall of the first encapsulation layer may be greater than a surface roughness of a sidewall of the second encapsulation layer.

公开(公告)号：US20210202303A1

公开(公告)日：2021-07-01

申请号：US16983298

申请日：2020-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dowan KIM ,  Doohwan LEE ,  Seunghwan BAEK

IPC: H01L21/768 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00

Abstract: A method of manufacturing a semiconductor package may include forming a first substrate including a redistribution layer, providing a second substrate including a semiconductor chip and an interconnection layer on the first substrate to connect the semiconductor chip to the redistribution layer, forming a first encapsulation layer covering the second substrate, and forming a via structure penetrating the first encapsulation layer. The forming the via structure may include forming a first via hole in the first encapsulation layer, forming a photosensitive material layer in the first via hole, exposing and developing the photosensitive material layer in the first via hole to form a second encapsulation layer having a second via hole, and filling the second via hole with a conductive material. A surface roughness of a sidewall of the first encapsulation layer may be greater than a surface roughness of a sidewall of the second encapsulation layer.